AP603-PCB900 TriQuint, AP603-PCB900 Datasheet - Page 4

RF Modules & Development Tools 869-960MHz Eval Brd 17dB Gain

AP603-PCB900

Manufacturer Part Number
AP603-PCB900
Description
RF Modules & Development Tools 869-960MHz Eval Brd 17dB Gain
Manufacturer
TriQuint
Datasheet

Specifications of AP603-PCB900

Board Size
6 mm x 5 mm x 1 mm
Minimum Frequency
869 MHz
Minimum Operating Temperature
- 40 C
Supply Voltage (min)
28 V
Product
RF Development Tools
Maximum Frequency
960 MHz
Output Power
7 W
Supply Voltage (max)
80 V
Supply Current
246 mA
Maximum Operating Temperature
+ 85 C
For Use With/related Products
AP603
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1067337
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com
Typical WCDMA Performance at 25 °C
Frequency
W-CDMA Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +30 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
19
18
17
16
15
14
-40
-45
-50
-55
-60
-65
30
at a channel power of +30 dBm
22
Unconditionally stable circuit version of this application circuit is available for download off of the website at: http://www.wj.com
869 MHz
880 MHz
894 MHz
ACLR1 vs. Output Power vs. Frequency
869 MHz
880 MHz
894 MHz
AP603
High Dynamic Range 7W 28V HBT Amplifier
Gain vs. Output Power vs. Frequency
L24 C28
32
24
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
Average Output Power (dBm)
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
Output Power (dBm)
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
34
26
869-894 MHz Application Circuit Performance Plots
36
28
L4
+38.5 dBm
880 MHz
+30 dBm
38
220 mA
160 mA
C31
-52 dBc
-52 dBc
30
16.5 %
7.5 dB
18 dB
+28 V
11 dB
+5 V
869-894 MHz Reference Design
40
32
-10
-15
-20
-25
-5
-50
-55
-60
-65
-70
-75
0
0.75
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of L24 is placed at 0.090” (3.5° @ 880 MHz) from the center of C5.
4. The center of C28 is placed at 0.220” (8.4° @ 880 MHz) from the edge of the AP603 (U1).
5. The center of L4 is placed at 0.200” (7.7° @ 880 MHz) from the edge of the AP603 (U1).
6. The center of C31 is placed at 0.360” (13.8° @ 880 MHz) from the center of L4.
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
8. The main RF trace is cut at component C28 and L4 for this particular reference design.
26
CW 2-tone signal, 880 MHz, ∆f = 1 MHz, 28V, 160 mA Icq, 25 ˚C
S11
S22
28
0.8
S11, S22 vs. Frequency
See note 3
Vcc = 28V, Icq = 160 mA, 25 ˚C
Output Power, PEP (dBm)
IMD vs. Output Power
2.2 nH
Frequency (GHz)
L24
IMD3L
30
0.85
See note 4
6.8 pF
C28
32
IMD3U
0.9
34
IMD5
0.95
36
Specifications and information are subject to change without notice
1000pF
C7
25
20
15
10
60
50
40
30
20
10
5
0
0
22
14
Efficiency vs. Output Power vs. Frequency
869 MHz
880 MHz
894 MHz
Efficiency vs. Output Power vs. Frequency
869 MHz
880 MHz
894 MHz
18
24
Average Output Power (dBm)
WCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C
CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C
See note 5
6.8 nH
Output Power (dBm)
22
26
26
Page 4 of 14 May 2007 ver 1
28
30
C31
3.3 pF
See note 6
30
34
32
38

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