BPX 61 OSRAM Opto Semiconductors Inc, BPX 61 Datasheet - Page 4

• Manufacturer Part Number: BPX 61
• Description: Photodiodes PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 61

• Photodiode Material: Silicon
• Peak Wavelength: 850 nm
• Half Intensity Angle Degrees: 55 deg
• Maximum Reverse Voltage: 32 V
• Maximum Power Dissipation: 250 mW
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 20 ns
• Maximum Fall Time: 20 ns
• Package / Case: TO-5
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 32V
• Forward Voltage: 1.3V
• Responsivity: 0.62A/W
• Dark Current (max): 30nA
• Power Dissipation: 250mW
• Rise Time: 20ns
• Fall Time: 20ns
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 2
• Package Type: TO-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62705P0025

Relative Spectral Sensitivity
S
Dark Current
I
Directional Characteristics
S
2007-03-30
R
rel
rel
S
Ι
=
R
4000
3000
2000
1000
rel
=
=
pA
100
f
0
80
60
40
20
%
f
f
0
(
400
0
V
(λ)
(ϕ)
R
),
500 600 700 800 900 nm 1100
E
5
= 0
10
15
OHF00080
V
OHF00078
V
λ
R
20
Photocurrent
Open-Circuit Voltage
Capacitance
C
C
=
100
pF
80
70
60
50
40
30
20
10
f
0
10
(
V
-2
R
),
f
10
= 1 MHz,
-1
I
P
10
=
4
0
f
(
E
E
v
10
V
),
= 0
1
O
V
OHF00081
V
=
V
R
R
f
= 5 V
10
(
E
2
v
)
Total Power Dissipation
P
Dark Current
I
R
tot
Ι
=
R
10
10
10
10
10
=
nA
f
-1
3
2
1
0
f
(
0
T
(
T
A
),
A
)
20
V
R
= 5 V,
40
60
E
= 0
80 ˚C 100
BPX 61
OHF00082
T
A