BPX 61 OSRAM Opto Semiconductors Inc, BPX 61 Datasheet - Page 3
BPX 61
Manufacturer Part Number
BPX 61
Description
Photodiodes PHOTODIODE
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheet
1.BPX_61.pdf
(6 pages)
Specifications of BPX 61
Photodiode Material
Silicon
Peak Wavelength
850 nm
Half Intensity Angle Degrees
55 deg
Maximum Reverse Voltage
32 V
Maximum Power Dissipation
250 mW
Maximum Dark Current
30 nA
Maximum Rise Time
20 ns
Maximum Fall Time
20 ns
Package / Case
TO-5
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
32V
Forward Voltage
1.3V
Responsivity
0.62A/W
Dark Current (max)
30nA
Power Dissipation
250mW
Rise Time
20ns
Fall Time
20ns
Operating Temp Range
-40C to 125C
Operating Temperature Classification
Automotive
Mounting
Through Hole
Pin Count
2
Package Type
TO-5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q62705P0025
Kennwerte (
Characteristics (
Bezeichnung
Parameter
Anstiegs- und Abfallzeit des Fotostroms
Rise and fall time of the photocurrent
R
Durchlassspannung,
Forward voltage
Kapazität,
Capacitance
Temperaturkoeffizient von
Temperature coefficient of
Temperaturkoeffizient von
Temperature coefficient of
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
Nachweisgrenze,
Detection limit
2007-03-30
L
R
= 50 Ω;
= 10 V, λ = 850 nm
V
V
R
R
T
= 0 V,
= 5 V; λ = 850 nm;
A
= 25 °C, Normlicht A,
T
V
A
R
f
= 25 °C, standard light A,
= 10 V, λ = 850 nm
I
= 1 MHz,
F
= 100 mA,
V
I
V
I
SC
SC
O
O
E
I
= 0
p
E
= 800 μA
= 0
T
= 2856 K)
T
= 2856 K) (cont’d)
3
Symbol
Symbol
t
V
C
TC
TC
NEP
D*
r,
F
0
t
f
V
I
Wert
Value
20
1.3
72
– 2.6
0.18
4.1 × 10
6.6 × 10
– 14
12
Einheit
Unit
ns
V
pF
mV/K
%/K
----------- -
cm
------------------------- -
W
Hz
×
W
BPX 61
Hz