EFM32G880F64 Energy Micro, EFM32G880F64 Datasheet - Page 62

• Manufacturer Part Number: EFM32G880F64
• Description: MCU 32BIT 64KB FLASH 100-QFP
• Manufacturer: Energy Micro
• Series: Geckor

Specifications of EFM32G880F64

• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: EBI/EMI, I²C, IrDA, SmartCard, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, WDT
• Number Of I /o: 86
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.8 V
• Data Converters: A/D 8x12b, D/A 2x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-LQFP
• Processor Series: EFM32G880
• Core: ARM Cortex-M3
• Data Bus Width: 32 bit
• Data Ram Size: 16 KB
• Interface Type: I2C, UART
• Maximum Clock Frequency: 32 MHz
• Number Of Programmable I/os: 85
• Number Of Timers: 3
• Operating Supply Voltage: 1.8 V to 3.8 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

7.4 Revision 1.00
7.5 Revision 0.85
7.6 Revision 0.83
7.7 Revision 0.82
7.8 Revision 0.81
2010-12-17 - d0009_Rev1.20
Updated VCMP characterization data.
April 23rd, 2010
ADC_VCM line removed.
Added pinout illustration and additional pinout table.
Changed "Errata" chapter. Errata description moved to separate document.
Document changed status from "Preliminary".
Updated "Electrical Characteristics" chapter.
February 19th, 2010
Renamed DBG_SWV pin to DBG_SWO.
January 25th, 2010
Updated errata section.
Specified flash word width in Section 3.7 (p. 19)
Added Capacitive Sense Internal Resistor values in Section 3.12 (p. 43) .
December 9th, 2009
Incorrect pin 0 removed from Table 4.1 (p. 48) .
Updated conctact information.
ADC current consumption numbers updated in Section 3.10 (p. 32)
Updated LCD supply voltage range in Section 3.14 (p. 46)
November 20th, 2009
Section 3.1 (p. 9) updated.
Storage temperature in Section 3.2 (p. 9) updated.
Temperature coefficient of band-gap reference in Section 3.6 (p. 18) added.
Erase times in Section 3.7 (p. 19) updated.
Definitions of DNL and INL added in Figure 3.27 (p. 36) and Figure 3.28 (p. 36) .
Section 3.14 (p. 46) added.
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