IPP60R520E6 Infineon Technologies, IPP60R520E6 Datasheet - Page 5

• Manufacturer Part Number: IPP60R520E6
• Description: MOSFET N-CH 600V 8.1A TO220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPP60R520E6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Vgs(th) (max) @ Id: 3.5V @ 230µA
• Gate Charge (qg) @ Vgs: 23.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 512pF @ 100V
• Power - Max: 66W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.47 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.1 A
• Power Dissipation: 66 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3
Table 3
Parameter
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Soldering temperature,
wavesoldering only allowed at
leads
Table 4
Parameter
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Soldering temperature,
wavesoldering only allowed at
leads
Final Data Sheet
Thermal characteristics
Thermal characteristics TO-220 (IPP60R520E6)
Thermal characteristics TO-220FullPAK (IPA60R520E6)
Symbol
R
R
T
Symbol
R
R
T
sold
sold
thJC
thJA
thJC
thJA
Min.
-
-
-
Min.
-
-
-
5
Typ.
-
-
-
Typ.
-
-
-
Values
Values
600V CoolMOS™ E6 Power Transistor
Max.
1.9
62
260
Max.
4.3
80
260
Unit
°C/W
°C
Unit
°C/W
°C
Thermal characteristics
Note /
Test Condition
leaded
1.6 mm (0.063 in.)
from case for 10 s
Note /
Test Condition
leaded
1.6 mm (0.063 in.)
from case for 10 s
Rev. 2.0, 2010-04-09
IPx60R520E6