IPP60R520E6 Infineon Technologies, IPP60R520E6 Datasheet - Page 11

• Manufacturer Part Number: IPP60R520E6
• Description: MOSFET N-CH 600V 8.1A TO220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPP60R520E6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Vgs(th) (max) @ Id: 3.5V @ 230µA
• Gate Charge (qg) @ Vgs: 23.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 512pF @ 100V
• Power - Max: 66W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.47 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.1 A
• Power Dissipation: 66 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Final Data Sheet
Table 15
Table 16
Typ. transfer characteristics
Avalanche energy
E
I
D
AS
=f(V
=f(T
GS
j
); V
); I
D
DS
=1.4 A; V
=20V
DD
=50 V
11
Typ. gate charge
V
Drain-source breakdown voltage
V
GS
BR(DSS)
=f(Q
600V CoolMOS™ E6 Power Transistor
=f(T
gate
), I
j
); I
D
=3.5 A pulsed
D
=0.25 mA
Electrical characteristics diagrams
Rev. 2.0, 2010-04-09
IPx60R520E6