NTD4965NT4G ON Semiconductor, NTD4965NT4G Datasheet - Page 5

• Manufacturer Part Number: NTD4965NT4G
• Description: MOSFET N-CH 30V 68A DPAK-4
• Manufacturer: ON Semiconductor

Specifications of NTD4965NT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.7 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1710pF @ 15V
• Power - Max: 1.39W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.7 mOhms
• Forward Transconductance Gfs (max / Min): 52 s
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 17.8 A
• Power Dissipation: 1.39 W, 2.6 W, 38.5 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 17.2 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1000
0.01
2400
2200
2000
1800
1600
1400
1200
1000
100
100
0.1
800
600
400
200
10
10
0.01
1
1
0
1
0
V
I
V
D
Figure 11. Maximum Rated Forward Biased
0 V < V
Single Pulse
T
DD
GS
C
= 15 A
= 25°C
= 15 V
= 10 V
V
Figure 9. Resistive Switching Time
t
DS
V
d(off)
5
GS
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0.1
t
, DRAIN−TO−SOURCE VOLTAGE (V)
< 10 V
f
R
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
G
Safe Operating Area
, GATE RESISTANCE (W)
C
10
rss
C
C
10
1
oss
iss
15
TYPICAL PERFORMANCE CURVES
20
10
T
V
J
GS
25
= 25°C
http://onsemi.com
10 ms
100 ms
t
t
1 ms
10 ms
dc
= 0 V
d(on)
r
100
100
30
5
40
36
32
28
24
20
16
12
10
30
25
20
15
10
8
4
0
9
8
7
6
5
4
3
2
1
5
0
0
0.4
25
0
Figure 8. Gate−to−Source and Drain−to−Source
Figure 10. Diode Forward Voltage vs. Current
V
Figure 12. Maximum Avalanche Energy vs.
GS
2
T
Q
J
= 0 V
gs
, STARTING JUNCTION TEMPERATURE (°C)
4
V
0.5
SD
Starting Junction Temperature
50
, SOURCE−TO−DRAIN VOLTAGE (V)
6
Q
Voltage vs. Total Charge
G
T
, TOTAL GATE CHARGE (nC)
J
8
= 125°C
0.6
Q
10
gd
75
12
0.7
14
Q
T
16
100
18
0.8
20
22
I
T
V
V
T
D
125
J
J
I
DD
GS
0.9
D
= 30 A
= 25°C
= 25°C
= 28 A
24
= 15 V
= 10 A
26
1.0
28
150