NTD4965NT4G ON Semiconductor, NTD4965NT4G Datasheet

NTD4965NT4G

Manufacturer Part Number

NTD4965NT4G

Description

MOSFET N-CH 30V 68A DPAK-4

Manufacturer

ON Semiconductor

Datasheet

1.NTD4965N-1G.pdf (7 pages)

Specifications of NTD4965NT4G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

4.7 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

13A

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

17.2nC @ 4.5V

Input Capacitance (ciss) @ Vds

1710pF @ 15V

Power - Max

1.39W

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

4.7 mOhms

Forward Transconductance Gfs (max / Min)

52 s

Drain-source Breakdown Voltage

30 V

Continuous Drain Current

17.8 A

Power Dissipation

1.39 W, 2.6 W, 38.5 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Gate Charge Qg

17.2 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTD4965NT4G

Manufacturer:

Quantity:

12 500

Current page: 1 of 7
Download datasheet (113Kb)

NTD4965N

Power MOSFET

30 V, 68 A, Single N−Channel, DPAK/IPAK

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

April, 2011 − Rev. 1

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

(Note 1)

Power

Dissipation R

(Note 1)

Continuous Drain

Current R

(Note 2)

Power

Dissipation R

(Note 2)

Continuous Drain

Current R

(Note 1)

Power

Dissipation R

(Note 1)

Pulsed Drain

Current

Current Limited by Package

Operating Junction and Storage

Temperature

Source Current (Body Diode)

Drain to Source dV/dt

Single Pulse Drain−to−Source Avalanche

Energy (T

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Compliant

Low R

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

Three Package Variations for Design Flexibility

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

CPU Power Delivery

DC−DC Converters

= 28 A

DS(on)

qJA

qJC

, L = 0.1 mH, R

= 25°C, V

qJA

qJC

to Minimize Conduction Losses

Parameter

Steady

State

=10ms

= 24 V, V

= 25 W)

= 25°C unless otherwise stated)

= 100°C

= 25°C

= 10 V,

Symbol

DmaxPkg

dV/dt

EAS

STG

DSS

−55 to

Value

+175

17.8

12.6

13.0

1.39

38.5

±20

248

260

2.6

9.2

6.0

Unit

V/ns

°C

Gate

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

CASE 369AA

1 2

(Bent Lead)

STYLE 2

Drain

Drain 3

(BR)DSS

30 V

DPAK

Source

ORDERING INFORMATION

4965N = Device Code

MARKING DIAGRAMS

& PIN ASSIGNMENTS

N−CHANNEL MOSFET

http://onsemi.com

Gate

4.7 mW @ 10 V

10 mW @ 4.5 V

(Straight Lead)

CASE 369AC

= Year

= Work Week

= Pb−Free Package

DS(ON)

Drain

3 IPAK

2 3

Publication Order Number:

MAX

Source

Gate

(Straight Lead

CASE 369D

NTD4965N/D

Drain

DPAK)

Drain

IPAK

68 A

MAX

Source

Related parts for NTD4965NT4G

NTD4965NT4G Summary of contents

Page 1

NTD4965N Power MOSFET Single N−Channel, DPAK/IPAK Features • Low R to Minimize Conduction Losses DS(on) • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Three Package Variations for Design ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−TAB (Drain) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State (Note 4) 3. Surface−mounted on FR4 board using 1 sq−in pad Cu. 4. Surface−mounted on FR4 board using the ...

Page 3

... Switching characteristics are independent of operating junction temperatures. 7. Assume terminal length of 110 mils. ORDERING INFORMATION Device NTD4965NT4G NTD4965N−1G NTD4965N−35G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 4

TYPICAL PERFORMANCE CURVES thru 4 25° DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics ...

Page 5

C iss 1800 1600 1400 1200 1000 800 C oss 600 400 C 200 rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...

Page 6

... DETAIL 0.005 (0.13 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE GAUGE L2 SEATING C PLANE PLANE DETAIL A ROTATED SOLDERING FOOTPRINT* 6.20 3 ...

Page 7

... Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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