STD9NM60N STMicroelectronics, STD9NM60N Datasheet - Page 8

• Manufacturer Part Number: STD9NM60N
• Description: MOSFET N-CH 600V 6.5A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD9NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 745 mOhm @ 3.25A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 452pF @ 50V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10959-2

Electrical characteristics
8/16
Figure 14. Normalized gate threshold voltage
Figure 16. Normalized B
V
BV
GS(th)
(norm)
1.00
0.90
0.80
0.70
(norm)
1.07
1.10
1.05
1.03
0.99
0.97
0.95
1.01
0.93
DSS
-50
-50
vs temperature
-25
-25
0
0
I
D
=1mA
25
25
50
VDSS
50
75
75
vs temperature
100
100
T
T
J
(°C)
J
Doc ID 18063 Rev 1
(°C)
AM08173v1
AM08171v1
Figure 15. Normalized on resistance vs
R
DS(on)
(norm)
1.7
1.5
1.3
1.1
0.9
0.7
0.5
1.9
2.1
STD9NM60N, STF9NM60N, STP9NM60N
-50
temperature
-25
0
25
I
D
50
=3.25A
75
100
T
J
(°C)
AM08172v1