STD9NM60N STMicroelectronics, STD9NM60N Datasheet - Page 5

• Manufacturer Part Number: STD9NM60N
• Description: MOSFET N-CH 600V 6.5A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD9NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 745 mOhm @ 3.25A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 452pF @ 50V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10959-2

STD9NM60N, STF9NM60N, STP9NM60N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
I
I
t
t
SD
RRM
RRM
I
d(on)
d(off)
Q
Q
SD
t
t
t
t
rr
rr
rr
rr
r
f
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Switching times
Source drain diode
Parameter
Parameter
Doc ID 18063 Rev 1
I
I
V
(see Figure 22)
I
V
(see Figure 22)
SD
SD
SD
V
R
(see Figure 17)
DD
DD
DD
G
= 6.5 A, V
= 6.5 A, di/dt = 100 A/µs
= 6.5 A, di/dt = 100 A/µs
= 4.7 Ω V
= 60 V
= 60 V, T
= 480 V, I
Test conditions
Test conditions
GS
j
GS
= 150 °C
D
= 6.5 A
= 10 V
= 0
Electrical characteristics
Min. Typ. Max. Unit
Min.
-
-
-
-
-
14.6
14.2
Typ. Max. Unit
52.5
26.7
264
324
1.9
2.3
28
23
6.5
1.6
26
-
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
5/16