FDI150N10 Fairchild Semiconductor, FDI150N10 Datasheet - Page 4

• Manufacturer Part Number: FDI150N10
• Description: MOSFET N-CH 100V 57A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDI150N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 49A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 69nC @ 10V
• Input Capacitance (ciss) @ Vds: 4760pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-262-3, Long Leads, I²Pak, TO-262AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDI150N10 Rev. A1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
1.15
1.10
1.05
1.00
0.95
0.90
0.01
100
500
0.1
-100
10
1
1
Operation in This Area
is Limited by R
vs. Temperature
-50
T
J
V
, Junction Temperature [
DS
0.01
, Drain-Source Voltage [V]
0.1
0
DS(on)
2
1
10
DC
-5
0.01
0.02
Single pulse
0.5
0.05
0.2
0.1
10
10ms
50
*Notes:
1ms
1. T
2. T
3. Single Pulse
C
J
100
= 150
100
= 25
Figure 11. Transient Thermal Response Curve
10
*Notes:
-4

1. V
2. I
o
s
C
o
C
o
10
D
C]
GS
150
= 250uA

s
= 0V
100
Rectangular Pulse Duration [sec]
10
200
-3
200
(Continued)
10
-2
4
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
2.4
2.0
1.6
1.2
0.8
0.4
70
60
50
40
30
20
10
*Notes:
-100
0
1. Z
2. Duty Factor, D= t
3. T
10
25
P
-1

JM
DM
JC
(t) = 1.13
- T
-50
C
vs. Temperature
= P
T
50
vs. Case Temperature
T
J
, Junction Temperature
t
C
1
DM
, Case Temperature [
t
o
2
C/W Max.
1
* Z
0
1
/t

JC
2
75
(t)
50
10
100
*Notes:
100
1. V
2. I
o
C]
D
[
GS
o
= 49A
C
125
= 10V
150
]
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200
150