FDI150N10 Fairchild Semiconductor, FDI150N10 Datasheet - Page 3

• Manufacturer Part Number: FDI150N10
• Description: MOSFET N-CH 100V 57A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDI150N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 49A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 69nC @ 10V
• Input Capacitance (ciss) @ Vds: 4760pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-262-3, Long Leads, I²Pak, TO-262AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDI150N10 Rev. A1
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
5000
4000
3000
2000
1000
100
500
30
25
20
15
10
10
5
0
2
0.1
0.02
0
V
GS
Drain Current and Gate Voltage
C
C
C
=
iss
oss
rss
V
15.0 V
10.0 V
DS
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
, Drain-Source Voltage [V]
DS
0.1
I
,Drain-Source Voltage[V]
D
100
, Drain Current [A]
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
V
GS
1
= 10V
*Notes:
*Note: T
1. 250
2. T
200
1
(
C ds = shorted
C
*Note:
= 25

V
1. V
2. f = 1MHz
s Pulse Test
GS
C
10
o
= 25
GS
C
= 20V
= 0V
o
)
C
300
30
10
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
1000
Figure 6. Gate Charge Characteristics
100
10
100
500
1
10
10
3
1
8
6
4
2
0
0.2
0
*Notes:
1. V
2. 250
DS
0.4
Variation vs. Source Current
V
and Temperature
10

4
SD
= 20V
s Pulse Test
V
, Body Diode Forward Voltage [V]
GS
Q
150
,Gate-Source Voltage[V]
0.6
g
, Total Gate Charge [nC]
o
20
C
150
V
V
V
5
DS
DS
DS
o
0.8
C
= 25V
= 50V
= 80V
30
*Notes:
1. V
2. 250
1.0
-55
6
GS
o
25
*Note: I
C
25

40
= 0V
o
s Pulse Test
C
o
1.2
C
7
D
www.fairchildsemi.com
= 49A
50
1.4
8
1.6
60