FDMS7650 Fairchild Semiconductor, FDMS7650 Datasheet - Page 4

• Manufacturer Part Number: FDMS7650
• Description: MOSFET N-CH 30V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS7650

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 990 mOhm @ 36A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 209nC @ 10V
• Input Capacitance (ciss) @ Vds: 14965pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.1 mOhms
• Forward Transconductance Gfs (max / Min): 267 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDMS7650 Rev.E
Typical Characteristics
1000
0.01
10
100
100
0.1
8
6
4
2
0
10
Figure 7.
10
1
1
10
0.01
0
I
-3
D
Figure 9.
SINGLE PULSE
T
R
T
THIS AREA IS
LIMITED BY r
= 36 A
Figure 11. Forward Bias Safe
J
A
θ
JA
= MAX RATED
= 25
= 125
10
Switching Capability
o
V
-2
C
Gate Charge Characteristics
DS
40
0.1
t
o
AV
Operating Area
C/W
, DRAIN to SOURCE VOLTAGE (V)
Unclamped Inductive
V
Q
, TIME IN AVALANCHE (ms)
DS(on)
DD
g
10
, GATE CHARGE (nC)
= 10 V
-1
V
T
DD
80
1
J
= 125
1
= 20 V
V
DD
T
J
o
= 15 V
= 25 °C unless otherwise noted
C
10
10
120
T
J
= 25
10
o
10 ms
100 ms
C
2
1 ms
DC
100200
160
10
3
4
20000
10000
1000
1000
250
200
150
100
100
100
50
10
Figure 10.
0
1
10
0.1
25
Figure 12.
-3
Limited by Package
Figure 8.
f = 1 MHz
V
Current vs Case Temperature
GS
= 0 V
10
V
50
-2
DS
Maximum Continuous Drain
Power Dissipation
to Source Voltage
T
, DRAIN TO SOURCE VOLTAGE (V)
V
c
t, PULSE WIDTH (sec)
GS
,
Single Pulse Maximum
Capacitance vs Drain
CASE TEMPERATURE (
10
= 4.5 V
-1
75
1
1
100
10
SINGLE PULSE
R
T
C
R
C
C
A
θ
o
oss
θ
JA
iss
rss
V
C )
= 25
JC
GS
= 125
125
= 1.2
10
= 10 V
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100
o
C
o
o
C/W
C/W
1000
150
30