FDMS7650 Fairchild Semiconductor, FDMS7650 Datasheet - Page 3

• Manufacturer Part Number: FDMS7650
• Description: MOSFET N-CH 30V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS7650

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 990 mOhm @ 36A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 209nC @ 10V
• Input Capacitance (ciss) @ Vds: 14965pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.1 mOhms
• Forward Transconductance Gfs (max / Min): 267 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDMS7650 Rev.E
Typical Characteristics
200
160
120
200
160
120
80
40
1.6
1.4
1.2
1.0
0.8
80
40
Figure 3. Normalized On Resistance
0
Figure 1.
0
-75
0
Figure 5. Transfer Characteristics
1
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
D
GS
DS
-50
= 36 A
vs Junction Temperature
V
= 10 V
V
= 3 V
GS
GS
V
V
T
V
= 3.5 V
= 3 V
GS
DS
-25
J
On Region Characteristics
GS
0.5
V
,
,
GS
= 4 V
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
V
DRAIN TO SOURCE VOLTAGE (V)
GS
= 4.5 V
2
0
= 10 V
T
J
25
= 150
µ
1.0
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
o
T
C
J
= 25 °C unless otherwise noted
75
3
1.5
o
100 125 150
C )
T
J
T
= -55
J
= 25
µ
o
s
C
o
C
2.0
4
3
200
100
0.1
10
10
1
7
6
5
4
3
2
1
0
8
6
4
2
0
0.0
Figure 2.
Figure 4.
0
Forward Voltage vs Source Current
2
vs Drain Current and Gate Voltage
Figure 6.
V
T
GS
J
V
= 25
= 0 V
V
GS
0.2
SD
= 3 V
o
40
, BODY DIODE FORWARD VOLTAGE (V)
C
T
Normalized On-Resistance
V
On-Resistance vs Gate to
J
GS
I
D
= 150
Source Voltage
4
Source to Drain Diode
,
,
DRAIN CURRENT (A)
GATE TO SOURCE VOLTAGE (V)
T
0.4
J
= 125
o
C
80
o
V
C
0.6
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
V
= 4.5 V
GS
120
I
D
= 3.5 V
= 36A
0.8
T
T
J
8
J
160
= -55
= 25
V
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1.0
GS
V
GS
= 10 V
o
o
C
C
= 4 V
µ
µ
s
s
200
1.2
10