GP2S27T2J00F Sharp Microelectronics, GP2S27T2J00F Datasheet - Page 7

• Manufacturer Part Number: GP2S27T2J00F
• Description: PHOTOINTERRUPTER REFL 0.7MM SMD
• Manufacturer: Sharp Microelectronics

Specifications of GP2S27T2J00F

• Sensing Distance: 0.028" (0.7mm)
• Sensing Method: Reflective
• Voltage - Collector Emitter Breakdown (max): 35V
• Current - Collector (ic) (max): 20mA
• Current - Dc Forward (if): 50mA
• Output Type: Phototransistor
• Response Time: 20µs, 20µs
• Mounting Type: Surface Mount
• Package / Case: 4-SMD
• Operating Temperature: -25°C ~ 85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 425-2569-2; GP2S27T2J00F

Fig.7 Collector Dark Current vs.
Fig.9 Test Circuit for Response Time
Fig.11 Detecting Position Characteristics (1)
Input
10
Ambient Temperature
10
10
10
10
R
100
Reflector
Plate
−10
D
80
60
40
20
−6
−7
−8
−9
0
−2
0
V
CE
−1
=20V
V
CC
Card moving distance L (mm)
Ambient temperature T
0
R
25
L
Output
1
2
50
Input
Output
3
4
a
(˚C)
t
75
d
I
V
d=1mm
T
F
5
a
=4mA
CE
=25˚C
=2V
6
t
r
t
s
100
7
t
f
10%
90%
7
Fig.8 Response Time vs. Load
Fig.10 Relative Collector Current vs.
Fig.12 Detecting Position Characteristics (2)
1 000
Resistance
100
100
100
1 0
0.1
Distance (Reference value)
80
60
40
20
80
60
40
20
1
0
0
0.1
−3
0
Distance between sensor and Al evaporation glass d (mm)
V
I
T
C
a
CE
−2
=100μA
=25˚C
=2V
−1
1
Card moving distance L (mm)
1
Load resistance R
0
2
1
t
d
10
2
t
GP2S27J0000F Series
r
3
t
L
s
(kΩ)
3
t
f
Sheet No.: D3-A01901EN
100
I
V
d=1mm
T
I
V
T
F
4
F
a
=4mA
CE
=25˚C
a
=4mA
CE
4
=25˚C
=2V
=2V
5
1 000
6
5