GP1S093HCZ0F Sharp Microelectronics, GP1S093HCZ0F Datasheet - Page 2

• Manufacturer Part Number: GP1S093HCZ0F
• Description: SENSOR OPTO SLOT 2MM TRANS THRU
• Manufacturer: Sharp Microelectronics
• Type: Unamplifiedr

Specifications of GP1S093HCZ0F

• Sensing Distance: 0.079" (2mm)
• Sensing Method: Transmissive
• Output Configuration: Phototransistor
• Current - Dc Forward (if): 50mA
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 35V
• Response Time: 50µs, 50µs
• Mounting Type: Through Hole
• Package / Case: PCB Mount
• Operating Temperature: -25°C ~ 85°C
• Output Collector Emitter Voltage (detector): 35 V
• Maximum Reverse Voltage (emitter): 6 V
• Maximum Collector Current (detector): 20 mA
• Slot Width: 2 mm
• Aperture Width: 0.3 mm
• Output Device: Phototransistor
• Power Dissipation: 100 mW
• Maximum Fall Time: 150000 ns
• Maximum Operating Temperature: + 85 C
• Maximum Rise Time: 150000 ns
• Minimum Operating Temperature: - 25 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 425-1963-5

■ Internal Connection Diagram
■ Outline Dimensions
Product mass : approx. 0.05g
Country of origin
Japan
3
2
Top view
∗3.55
4.5
2
(C0.3)
Top view
4
1
2
3
0.15
(C0.3)
Optical
center
• Unspecifi ed tolerance shall be ±0.2mm.
• Dimensions in parenthesis are shown for
• The dimensions indicated by ∗ refer to those
• The dimensions shown do not include those of
• The lead may be exposed at the shaded
• ∗∗ This portion has no solder plating.
• ∗∗∗ This portion does not have any solder
+0.2
−0.1
reference.
measured from the lead base.
burrs.
Burr's dimension shall be 0.15mm MAX.
portion.
plating in some cases.
Plating material : SnCu (Cu : TYP. 2%)
(C0.4)
1
4
∗∗∗
1
2
3
4
∗∗∗
2.6
Anode
Collector
Emitter
Cathode
∗∗
∗2
0.4
∗∗∗
Slit width
a-aʼ section
(Unit : mm)
(0.3)
2
Sheet No.: D3-A00401EN
GP1S093HCZ0F