IXFN72N55Q2 IXYS, IXFN72N55Q2 Datasheet - Page 4

• Manufacturer Part Number: IXFN72N55Q2
• Description: MOSFET N-CH 550V 72A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN72N55Q2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 72 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 72A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 258nC @ 10V
• Input Capacitance (ciss) @ Vds: 10500pF @ 25V
• Power - Max: 890W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.072 Ohms
• Drain-source Breakdown Voltage: 550 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 72 A
• Power Dissipation: 890 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 550
• Id(cont), Tc=25°c, (a): 72
• Rds(on), Max, Tj=25°c, (?): 0.072
• Ciss, Typ, (pf): 7200
• Qg, Typ, (nc): 270
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 890
• Rthjc, Max, (ºc/w): 0.14
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
100000
10000
1000
100
200
180
160
140
120
100
100
90
80
70
60
50
40
30
20
10
80
60
40
20
0
0
3.5
0.2
0
T
J
= 125ºC
0.4
5
4
T
f = 1MHz
J
Fig. 11. Capacitance
Fig. 9. Source Current vs.
Fig. 7. Input Adm ittance
= 125ºC
Source-To-Drain Voltage
10
-40ºC
25ºC
4.5
0.6
V
V
15
V
T
G S
S D
0.8
J
D S
5
= 25ºC
- Volts
- Volts
20
- Volts
5.5
1
25
C oss
C rss
C iss
1.2
6
30
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6.5
1.4
35
1.6
40
7
0.16
0.14
0.12
0.08
0.06
0.04
0.02
110
100
0.1
90
80
70
60
50
40
30
20
10
10
0
9
8
7
6
5
4
3
2
1
0
0
Fig. 12. Maxim um Transient Therm al
0
0
1
T
J
V
I
I
D
G
20
= -40ºC
DS
40
Fig. 8. Transconductance
125ºC
= 36A
= 10mA
25ºC
= 275V
Fig. 10. Gate Charge
Pulse Width - milliseconds
40
80
Q
Re sistance
10
G
60
I
- nanoCoulombs
D
120
- Amperes
80
IXFN 72N55Q2
160
100
100
200
120
6,534,343
240
140
1000
160
280