IXFN72N55Q2 IXYS, IXFN72N55Q2 Datasheet
IXFN72N55Q2
Manufacturer Part Number
IXFN72N55Q2
Description
MOSFET N-CH 550V 72A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFN72N55Q2.pdf
(4 pages)
Specifications of IXFN72N55Q2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
72 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
72A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
258nC @ 10V
Input Capacitance (ciss) @ Vds
10500pF @ 25V
Power - Max
890W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.072 Ohms
Drain-source Breakdown Voltage
550 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
72 A
Power Dissipation
890 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
550
Id(cont), Tc=25°c, (a)
72
Rds(on), Max, Tj=25°c, (?)
0.072
Ciss, Typ, (pf)
7200
Qg, Typ, (nc)
270
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
890
Rthjc, Max, (ºc/w)
0.14
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN72N55Q2
Manufacturer:
SanRex
Quantity:
1 000
Part Number:
IXFN72N55Q2
Quantity:
125
© 2003 IXYS All rights reserved
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated, Low Q
High dV/dt, Low t
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
J
stg
DGR
GS
GSM
AR
D
JM
ISOL
DSS
AS
d
DSS
DS(on)
G S ( t h )
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
50/60 Hz, RMS, t = 1 minute
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
S
V
V
Note 1
C
C
C
C
C
C
J
J
J
GS
V
GS
GS
GS
DS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
DS
= 10 V, I
= 0 V, I
= ±30 V, V
= V
= 0 V
DM
= V
rr
, di/dt ≤ 100 A/µs, V
DSS
TM
GS
D
, I
= 1mA
D
D
= 0.5 • I
G
DS
= 8mA
= 2 Ω
= 0
g
, Low Intrinsic R
D25
GS
= 1 MΩ
DD
(T
T
T
≤ V
J
J
J
= 25°C, unless otherwise specified)
= 25°C
DSS
= 125°C
JM
g
IXFN 72N55Q2
min.
550
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
550
550
±30
±40
288
890
150
5.0
72
72
60
20
30
max.
±200 nA
100 µA
5.0 V
72 mΩ
5 mA
V/ns
mJ
°C
°C
°C
W
V
V
V
V
A
A
A
V
g
V
J
V
I
R
t
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•
•
•
•
•
Applications
•
•
•
•
Advantages
•
•
•
miniBLOC, SOT-227 B (IXFN)
D25
rr
Double metal process for low
miniBLOC, with Aluminium nitride
isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
gate resistance
DC-DC converters
Switched-mode and resonant-mode
power supplies
DC choppers
Pulse generators
Easy to mount
Space savings
High power density
DSS
DS(on)
E153432
≤ ≤ ≤ ≤ ≤ 250 ns
= 550 V
= 72 mΩ Ω Ω Ω Ω
= 72
G
D = Drain
S
DS99030B(10/03)
D
A
S
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IXFN72N55Q2 Summary of contents
Page 1
... ± GSS DSS DS DSS 0.5 • I DS(on D25 Note 1 © 2003 IXYS All rights reserved IXFN 72N55Q2 g Maximum Ratings 550 = 1 MΩ 550 GS ±30 ±40 72 288 5.0 ≤ DSS 890 -55 ... +150 150 -55 ... +150 2500 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 Characteristic Values (T = 25° ...
Page 2
... A/µ 100 Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. ...
Page 3
... Volts D S Fig Norm alized to I DS(on) Value vs 10V 2 2.2 2 1.8 1.6 1.4 T 1 Amperes D © 2003 IXYS All rights reserved 180 160 140 120 100 2.8 2.6 8V 2.4 7V 2.2 6V 1.8 1.6 1.4 1.2 5V 0.8 0.6 0 D25 D = 125º ...
Page 4
... V - Volts S D Fig. 11. Capacitance 100000 f = 1MHz 10000 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 110 100 5 1.2 1 ...