GA200TD120U Vishay, GA200TD120U Datasheet - Page 4

• Manufacturer Part Number: GA200TD120U
• Description: IGBT FAST 1200V 200A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA200TD120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 37.343nF @ 30V
• Power - Max: 1040W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Dual INT-A-PAK (3 + 8)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: VS-GA200TD120U; VS-GA200TD120U; VSGA200TD120U; VSGA200TD120U

GA200TD120U
Fig. 4 - Maximum Collector Current vs. Case
4
250
200
150
100
0 . 0 0 1
50
0 . 0 1
0.1
0
0 . 0 0 0 1
25
1
D = 0.50
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
T , Case Temperature ( C)
0 .2 0
0.1 0
0 .05
0 .0 2
0.01
C
Temperature
0 . 0 0 1
75
(TH ER M A L R ES PO N S E)
SIN G L E P UL SE
100
0 . 0 1
°
125
t , R ecta ngu la r Pulse D u ration (se c)
1
150
0.1
Fig. 5 - Typical Collector-to-Emitter Voltage
3.0
2.0
1.0
-60 -40 -20
1

V
80 us PULSE WIDTH
GE
vs. Junction Temperature
= 15V
Notes:
1. Duty factor D = t / t
2. Peak T = P
T , Junction Temperature ( C)
J
0
1 0
J
20 40
DM
x Z
60
1
thJC
2
P
80 100 120 140 160
DM
1 0 0
+ T
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I =

I =

I =
C
C
C
C
t
1
400
200
100
t 2
°
A
A
A
1 0 0 0
A