GA200TD120U Vishay, GA200TD120U Datasheet - Page 3

• Manufacturer Part Number: GA200TD120U
• Description: IGBT FAST 1200V 200A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA200TD120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 37.343nF @ 30V
• Power - Max: 1040W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Dual INT-A-PAK (3 + 8)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: VS-GA200TD120U; VS-GA200TD120U; VSGA200TD120U; VSGA200TD120U

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1000
100
10
120
100
80
60
40
20
1.0
0
Fig. 2 - Typical Output Characteristics
0.1
S q u a re w a v e :
V
CE
1.5
, Collector-to-Emitter Voltage (V)

T = 125 C
60 % of ra ted
J
Id e a l d io d e s
I
vo ltag e
°
2.0

T = 25 C

J
Fig. 1 - Typical Load Current vs. Frequency
V
80µs PULSE WIDTH
GE
= 15V
°
(Load Current = I
2.5
1
3.0
f, Frequency (KHz)
RMS
of fundamental)
1000
100
10
Fig. 3 - Typical Transfer Characteristics
1
5.0

T = 125 C
J
V
GE
10
6.0
GA200TD120U
, Gate-to-Emitter Voltage (V)
°
For both:
D uty cy cle: 50%
T = 125°C
T
G ate drive as specified
P ow e r Dis sip ation =
J
s ink

= 90°C
T = 25 C
7.0
J

V
80µs PULSE WIDTH
CE
°
= 25V
160
8.0
W
100
3
9.0