MUBW35-12A8 IXYS, MUBW35-12A8 Datasheet - Page 7

• Manufacturer Part Number: MUBW35-12A8
• Description: MODULE IGBT CBI E3
• Manufacturer: IXYS

Specifications of MUBW35-12A8

• Igbt Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 35A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 1.1mA
• Input Capacitance (cies) @ Vce: 1.65nF @ 25V
• Power - Max: 225W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 80
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.30
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 50
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 35
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 2.5
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.55
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 25
• Rthjc, Typ, Br Chopper, (k/w): 0.70
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2007 IXYS All rights reserved
E
E
Output Inverter T1 - T6 / D1 - D6
I
CM
on
on
mJ
60
40
20
mJ
A
6
4
2
0
0
9
6
3
0
0
0
0
V
V
I
T
R
T
E on
Fig. 13 Typ. turn on energy and switching
Fig. 15 Typ. turn on energy and switching
Fig. 17 Reverse biased safe operating area
C
VJ
VJ
CE
GE
G
t d(on)
t r
= 39 Ω
= 125°C
= 600 V
= ±15 V
200
= 35 A
= 125°C
20
times versus collector current
times versus gate resistor
RBSOA
20
400
40
600
40
800 1000 1200 1400
60
R
I
G
C
V
V
R
T
60
VJ
CE
GE
G
80
V
= 39 Ω
= 600 V
= ±15 V
= 125°C
CE
A
t d(on)
Ω
E on
t r
100
80
160
120
80
40
0
ns
180
150
120
90
60
30
0
ns
V
t
t
E
Z
E
0.0001
thJC
off
off
0.001
0.01
K/W
0.1
mJ
0.00001 0.0001 0.001
mJ
10
6
4
2
0
8
6
4
2
0
1
0
Fig. 14 Typ. turn off energy and switching
Fig.16 Typ. turn off energy and switching
Fig. 18 Typ. transient thermal impedance
E
V
V
R
T
off
VJ
CE
GE
G
87
= 39 Ω
= 600 V
= ±15 V
= 125°C
times versus collector current
times versus gate resistor
20
single pulse
88
V
V
I
T
C
VJ
CE
GE
E
MUBW 35-12 A8
off
0.01
= 600 V
= ±15 V
= 35 A
= 125°C
40
89
R
0.1
G
I
C
t
60
1
A
90
MUBW3512A8
t
t
Ω
diode
d(off)
f
IGBT
t
s
d(off)
t
f
80
10
20070912a
1200
1000
800
600
400
200
0
800
600
400
200
0
ns
ns
7 - 8
t
t