MUBW35-12A8 IXYS, MUBW35-12A8 Datasheet - Page 5

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MUBW35-12A8

Manufacturer Part Number
MUBW35-12A8
Description
MODULE IGBT CBI E3
Manufacturer
IXYS
Datasheet

Specifications of MUBW35-12A8

Igbt Type
NPT
Configuration
Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.1V @ 15V, 35A
Current - Collector (ic) (max)
50A
Current - Collector Cutoff (max)
1.1mA
Input Capacitance (cies) @ Vce
1.65nF @ 25V
Power - Max
225W
Input
Three Phase Bridge Rectifier
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
E3
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Pin Count
24
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Vrrm, Rect 1/3 Ph., (v)
1600
Idavm, Tc = 80°c, Rect 1/3 Ph., (a)
80
Rthjc, Typ, Rect 1/3 Ph., (k/w)
1.30
Vces, Inv 3 - Ph., (v)
1200
Ic25, Tc = 25°c, Inv 3 - Ph., (a)
50
Ic80, Tc = 80°c, Inv 3 - Ph., (a)
35
Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v)
2.5
Rthjc, Typ, Inv 3 - Ph., (k/w)
0.55
Vces, Br Chopper, (v)
1200
Ic80, Tc = 80°c, Br Chopper, (a)
25
Rthjc, Typ, Br Chopper, (k/w)
0.70
Package Style
E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MUBW35-12A8
Manufacturer:
MITSUBISH
Quantity:
1 000
Part Number:
MUBW35-12A8
Quantity:
60
© 2007 IXYS All rights reserved
Z
P
Input Rectifier Bridge D11 - D16
I
F
thJC
tot
120
100
350
300
250
200
150
100
K/W
1.2
0.8
0.4
0.0
W
80
60
40
20
50
0.001
A
0
0
0.0
0
Fig. 1 Forward current versus
Fig. 4
Fig. 6 Transient thermal impedance junction to case
0.6
voltage drop per diode
Power dissipation versus direct output current and ambient temperature, sin 180°
T
T
40
VJ
VJ
= 125°C
= 25°C
1.2
0.01
80
V
F
1.8
V
I
d(AV)M
120
2.4
A
0.1
I
FSM
200
150
100
0
50
A
0.001
0
Fig. 2 Surge overload current
20
50Hz, 80% V
40
0.01
60
RRM
1
80 100 120 140
T
T
T
VJ
VJ
amb
0.1
= 45°C
= 150°C
t
0.05 K/W
0.15 K/W
t
R
0.3 K/W
0.5 K/W
thA
s
1 K/W
2 K/W
5 K/W
s
:
DWN 17
C
1
10
I
d(AV)
I
2
t
10
A
10
80
70
60
50
40
30
20
10
A
2
0
s
3
2
1
0
Fig. 3 I
Fig. 5 Max. forward current
MUBW 35-12 A8
20 40 60 80 100 120 140
versus case temperature
2
t versus time per diode
2
T
VJ
= 45°C
3
T
VJ
4 5 6 7 8 9
= 150°C
T
C
t
20070912a
ms
5 - 8
C
10

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