MUBW15-12A6K IXYS, MUBW15-12A6K Datasheet - Page 9

• Manufacturer Part Number: MUBW15-12A6K
• Description: MODULE IGBT CBI E1
• Manufacturer: IXYS
• Type: Converter/Brake/Inv (CBI) IGBT Modulesr

Specifications of MUBW15-12A6K

• Igbt Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.4V @ 15V, 15A
• Current - Collector (ic) (max): 19A
• Current - Collector Cutoff (max): 600µA
• Input Capacitance (cies) @ Vce: 0.6nF @ 25V
• Power - Max: 90W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E1
• Mounting Style: Screw
• Product: Power Semiconductor Modules
• Reverse Voltage: 1.6 KV
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 89
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.4
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 19
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 13
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 3.00
• Rthjc, Typ, Inv 3 - Ph., (k/w): 1.35
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 13
• Rthjc, Typ, Br Chopper, (k/w): 1.35
• Package Style: E1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
E
Z
I
off
C
thJC
0.01
K/W
0.1
mJ
25
20
15
10
10
A
0.001
5
0
4
3
2
1
0
1
0
0
Fig. 9 Typ. output characteristics
Fig. 2 Typ. turn off energy and switching
Fig. 23 Typ. transient thermal impedance
V
E
GE
off
V
V
R
T
= 15V
VJ
CE
GE
G
1
= 600V
= 82
= ±15V
= 125°C
times versus collector current
5
0.01
single pulse
T
VJ
2
= 25°C
10
0.1
3
T
VJ
V
= 125°C
15
4
CE
I
C
t
1
5
20
diode
IGBT
t
V
t
d(off)
f
s
A
10
6
400
300
200
100
0
ns
t
R
E
10000
off
I
1000
F
100
1.2
0.8
0.4
0.0
mJ
30
25
20
15
10
A
5
0
0
0
0
Fig. 20 Typ. forward characteristics
Fig. 22 Typ. turn off energy and switching
Fig. 24 Typ. thermistor resistance
V
V
I
T
C
VJ
CE
GE
E
off
= 600V
= ±15V
= 20A
20
= 125°C
25
of free wheeling diode
times versus gate resistor
versus temperature
1
40
50
T
MUBW15-12A6K
VJ
60
= 125°C
75
2
80
V
100
F
T
100
VJ
T
= 25°C
3
R
125
G
MUBW15-12A6K
120
V
t
t
d(off)
f
C
20073a
150
4
9 - 9
600
ns
400
200
0
t