MUBW15-12A6K IXYS, MUBW15-12A6K Datasheet - Page 8

• Manufacturer Part Number: MUBW15-12A6K
• Description: MODULE IGBT CBI E1
• Manufacturer: IXYS
• Type: Converter/Brake/Inv (CBI) IGBT Modulesr

Specifications of MUBW15-12A6K

• Igbt Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.4V @ 15V, 15A
• Current - Collector (ic) (max): 19A
• Current - Collector Cutoff (max): 600µA
• Input Capacitance (cies) @ Vce: 0.6nF @ 25V
• Power - Max: 90W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E1
• Mounting Style: Screw
• Product: Power Semiconductor Modules
• Reverse Voltage: 1.6 KV
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 89
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.4
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 19
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 13
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 3.00
• Rthjc, Typ, Inv 3 - Ph., (k/w): 1.35
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 13
• Rthjc, Typ, Br Chopper, (k/w): 1.35
• Package Style: E1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
E
E
I
CM
on
on
2.0
1.5
1.0
0.5
0.0
mJ
mJ
30
25
20
15
10
A
4
3
2
1
0
5
0
0
0
0
Fig. 3 Typ. turn on energy and switching
Fig. 5 Typ. turn on energy and switching
Fig. 7 Reverse biased safe operating area
E
V
V
I
T
R
T
V
V
R
T
C
VJ
CE
GE
VJ
on
VJ
G
CE
GE
G
= 82
200
= 600V
= 125°C
= ±15V
= 10A
= 125°C
20
= 82
= 600V
= ±15V
t
= 125°C
d(on)
times versus collector current
times versus gate resistor
RBSOA
5
400
40
t
600
r
60
10
800 1000 1200 1400
80
R
15
G
100
I
C
V
120
CE
20
t
E
t
d(on)
r
on
A
140
80
ns
60
40
20
0
100
75
50
25
0
ns
V
t
t
E
E
Z
thJC
off
off
0.01
K/W
1.2
0.8
0.4
0.0
mJ
0.1
mJ
10
0.001
4
3
2
1
0
1
0
0
Fig. 4 Typ. turn off energy and switching
Fig.6 Typ. turn off energy and switching
Fig. 8 Typ. transient thermal impedance
V
V
I
T
C
V
V
R
T
CE
GE
VJ
E
VJ
CE
GE
G
off
= 600V
= ±15V
= 10A
= 125°C
20
= 82
= 600V
= ±15V
= 125°C
times versus collector current
times versus gate resistor
0.01
5
40
single pulse
MUBW15-12A6K
60
10
0.1
80
R
15
G
100
I
t
C
1
120
MUBW 15-12A6K
20
t
t
diode
IGBT
d(off)
f
t
t
E
d(off)
s
f
A
off
140
10
20073a
400
300
200
100
0
600
400
200
0
ns
ns
8 - 9
t
t