STGE50NC60VD STMicroelectronics, STGE50NC60VD Datasheet - Page 7

• Manufacturer Part Number: STGE50NC60VD
• Description: IGBT 50A 600V ISOTOP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGE50NC60VD

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 40A
• Current - Collector (ic) (max): 90A
• Current - Collector Cutoff (max): 150µA
• Input Capacitance (cies) @ Vce: 4.55nF @ 25V
• Power - Max: 260W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Transistor Type: IGBT
• Dc Collector Current: 90A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 260W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-7011-5

STGE50NC60VD
2.1
Figure 2.
Figure 4.
Figure 6.
Electrical characteristics (curves)
Output characteristics
Transconductance
Collector-emitter on voltage vs
collector current
Doc ID 12807 Rev 3
Figure 3.
Figure 5.
Figure 7.
Transfer characteristics
Collector-emitter on voltage vs
temperature
Normalized gate threshold vs
temperature
Electrical characteristics
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