STGE50NC60VD STMicroelectronics, STGE50NC60VD Datasheet - Page 4

• Manufacturer Part Number: STGE50NC60VD
• Description: IGBT 50A 600V ISOTOP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGE50NC60VD

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 40A
• Current - Collector (ic) (max): 90A
• Current - Collector Cutoff (max): 150µA
• Input Capacitance (cies) @ Vce: 4.55nF @ 25V
• Power - Max: 260W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Transistor Type: IGBT
• Dc Collector Current: 90A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 260W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-7011-5

Electrical characteristics
4/14
2
(T
Table 4.
1. Pulsed: pulse duration= 300 µs, duty cycle 1.5%
Table 5.
V
Symbol
Symbol
V
V
J
(BR)CES
g
CE(sat)
I
I
C
GE(th)
C
C
Q
Q
CES
GES
= 25 °C unless otherwise specified)
fs
Q
oes
ies
res
ge
gc
(1)
g
Electrical characteristics
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Dynamic
GE
GE
Static
= 0)
= 0)
Parameter
Parameter
CE
= 0)
Doc ID 12807 Rev 3
V
V
V
V
see
I
V
V
T
V
V
V
V
C
CE
GE
CE
GE
GE
GE
j
GE
CE
CE
CE
CE
=125 °C
= 1 mA
= V
=600 V
= 600 V, T
Figure 17
= 15 V, I
= 15 V, I
= ±20 V
= 25 V, f = 1 MHz,
= 0
= 390 V, I
= 15 V,
= 15 V
Test conditions
Test conditions
GE
, I
,
C
I
C
C
C
= 250 µA
= 40 A
=40 A,
C
= 20 A
j
= 125 °C
= 40 A,
Min.
Min.
3.75
600
-
-
4550
Typ.
Typ.
350
105
214
1.9
1.7
30
96
20
STGE50NC60VD
Max.
±100
Max.
5.75
150
2.5
-
-
1
Unit
Unit
mA
µA
nA
nC
nC
nC
pF
pF
pF
V
V
V
V
S