APTGT600DA60G Microsemi Power Products Group, APTGT600DA60G Datasheet - Page 5

• Manufacturer Part Number: APTGT600DA60G
• Description: IGBT 600V 700A 2300W SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT600DA60G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 600A
• Current - Collector (ic) (max): 700A
• Current - Collector Cutoff (max): 750µA
• Input Capacitance (cies) @ Vce: 49nF @ 25V
• Power - Max: 2300W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.12
0.08
0.06
0.04
0.02
120
100
0.1
80
60
40
20
0.00001
0
0
Operating Frequency vs Collector Current
0
ZCS
0.5
0.3
0.9
0.7
0.1
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
switching
0.05
Hard
200
ZVS
400
0.0001
I
C
(A)
600
V
D=50%
R
T
T
J
c
CE
G
=150°C
=85°C
=1Ω
800
=300V
Rectangular Pulse Duration in Seconds
0.001
1000
Single Pulse
Diode
www.microsemi.com
0.01
1200
1000
800
600
400
200
0
APTGT600DA60G
0
0.1
Forward Characteristic of diode
0.4
T
J
=150°C
T
J
0.8
=125°C
V
1
F
(V)
1.2
1.6
T
J
=25°C
10
2
5 - 5