APTGT600DA60G Microsemi Power Products Group, APTGT600DA60G Datasheet - Page 4

• Manufacturer Part Number: APTGT600DA60G
• Description: IGBT 600V 700A 2300W SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT600DA60G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 600A
• Current - Collector (ic) (max): 700A
• Current - Collector Cutoff (max): 750µA
• Input Capacitance (cies) @ Vce: 49nF @ 25V
• Power - Max: 2300W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
1200
1000
1200
1000
40
30
20
10
0.07
0.06
0.05
0.04
0.03
0.02
0.01
Switching Energy Losses vs Gate Resistance
800
600
400
200
800
600
400
200
0
0.00001
0
0
0
0
V
V
I
T
5
0
C
J
CE
GE
= 600A
= 150°C
Output Characteristics (V
= 300V
0.7
0.5
=15V
0.3
0.9
0.1
0.05
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
Transfert Characteristics
6
0.5
Gate Resistance (ohms)
T
J
=150°C
T
Eon
J
=125°C
2
T
7
J
T
0.0001
=25°C
J
1
=125°C
V
V
CE
GE
3
T
8
T
(V)
Eoff
J
=25°C
J
(V)
=25°C
1.5
4
9
T
GE
J
=25°C
T
=15V)
Er
J
2
Eon
=150°C
Rectangular Pulse Duration in Seconds
0.001
10
5
2.5
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11
Single Pulse
6
0.01
1400
1200
1000
1200
1000
40
35
30
25
20
15
10
800
600
400
200
800
600
400
200
5
0
0
0
0
APTGT600DA60G
0
0
V
V
R
T
Reverse Bias Safe Operating Area
Energy losses vs Collector Current
CE
GE
G
J
V
T
R
T
= 150°C
= 1Ω
0.1
J
= 300V
= 15V
200
GE
G
J
=150°C
100 200 300 400 500 600 700
=1Ω
0.5
= 150°C
=15V
V
GE
400
Output Characteristics
1
=19V
1.5
600
I
V
C
V
CE
CE
(A)
1
(V)
(V)
2
V
800
GE
Eoff
=15V
2.5
V
IGBT
GE
1000 1200
=13V
V
GE
Eon
3
Er
=9V
10
3.5
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