APT100GN120J Microsemi Power Products Group, APT100GN120J Datasheet - Page 5

• Manufacturer Part Number: APT100GN120J
• Description: IGBT 1200V 153A 446W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT100GN120J

• Igbt Type: Field Stop and Trench
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 153A
• Current - Collector Cutoff (max): 100µA
• Input Capacitance (cies) @ Vce: 6.5nF @ 25V
• Power - Max: 446W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Case temperature. (°C)
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
5,000
1,000
0.30
0.25
0.20
0.15
0.10
0.05
500
100
Junction
temp. (°C)
V
CE
0
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
(watts)
Power
-5
D = 0.9
10
0.05
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
20
RC MODEL
10
-4
0.0798
0.174
0.0266
30
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
10
ies
oes
res
0.0158
0.397
28.9
-3
SINGLE PULSE
50
10
-2
Figure 20, Operating Frequency vs Collector Current
25
10
5
1
10
T
T
D = 50 %
V
R
J
C
CE
G
= 125
= 75
= 1.0Ω
350
300
250
200
150
100
= 800V
30
Figure 18,Minimim Switching Safe Operating Area
50
0
°
I
°
C
C
0
C
V
, COLLECTOR CURRENT (A)
10
CE
50
200
-1
, COLLECTOR TO EMITTER VOLTAGE
70
400
Note:
90
Peak T J = P DM x Z θJC + T C
600
Duty Factor D =
110
1.0
800
t 1
130
t 2
1000 1200 1400
t 1
150
/
t 2
APT100GN120J
F
f
f
P
max1
max2
max
diss
10
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f