APT100GN120J Microsemi Power Products Group, APT100GN120J Datasheet - Page 3

• Manufacturer Part Number: APT100GN120J
• Description: IGBT 1200V 153A 446W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT100GN120J

• Igbt Type: Field Stop and Trench
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 153A
• Current - Collector Cutoff (max): 100µA
• Input Capacitance (cies) @ Vce: 6.5nF @ 25V
• Power - Max: 446W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 7, Threshold Voltage vs. Junction Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
300
250
200
150
100
300
250
200
150
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
50
50
0
0
0
-50 -25
FIGURE 1, Output Characteristics(T
V
0
0
8
CE
V
GE
V
TEST<0.5 % DUTY
V
T
T
T
T
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
GE
J
J
J
250µs PULSE
T
J
= 15V
= -55°C
= 25°C
= 175°C
= 125°C
2
J
, GATE-TO-EMITTER VOLTAGE (V)
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
1.0
10
0
4
T
J
= -55°C
25
2.0
T
J
6
= 25°C
T
12
50
J
= 125°C
8
3.0
75 100 125 150
10
14
4.0
J
12
= 25°C)
5.0
16
14
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
300
250
200
150
100
250
200
150
100
3.5
2.5
1.5
0.5
50
16
14
12
10
50
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
3
2
1
0
0
-50 -25
-50
V
0
0
CE
I
T
<0.5 % DUTY CYCLE
C
250µs PULSE TEST
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 100A
= 25°C
-25
100
V
T
5
GE
T
C
J
= 15V.
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
0
0
V
GATE CHARGE (nC)
CE
200
10
V
15V
CE
25
25
= 600V
11V
= 240V
300
15
50
50
10V
75
75 100 125 150
9V
400
20
8V
100 125 150
7V
500
25
J
= 125°C)
600
30