STTH12003TV1 STMicroelectronics, STTH12003TV1 Datasheet - Page 3

• Manufacturer Part Number: STTH12003TV1
• Description: DIODE HI FREQ 300V 60A ISOTOP
• Manufacturer: STMicroelectronics

Specifications of STTH12003TV1

• Voltage - Forward (vf) (max) @ If: 1.25V @ 60A
• Current - Reverse Leakage @ Vr: 120µA @ 300V
• Current - Average Rectified (io) (per Diode): 60A
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 70ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig. 1: Conduction losses versus average current
(per diode).
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 5: Reverse recovery time versus dI
confidence, per diode).
90
80
70
60
50
40
30
20
10
1.0
0.8
0.6
0.4
0.2
0.0
200
180
160
140
120
100
0
80
60
40
20
1E-3
0
0
P1(W)
Zth(j-c)/Rth(j-c)
0
trr(ns)
Single pulse
= 0.5
= 0.2
= 0.1
50 100 150 200 250 300 350 400 450 500
10
= 0.05
IF=2*IF(av)
1E-2
20
IF=0.5*IF(av)
= 0.1
dIF/dt(A/µs)
30
IF(av) (A)
IF=IF(av)
tp(s)
1E-1
= 0.2
40
50
= 0.5
1E+0
60
=tp/T
=tp/T
VR=200V
Tj=125°C
F
/dt (90%
T
70
T
= 1
tp
1E+1
tp
80
Fig. 2: Forward voltage drop versus forward
current (per diode)
600
100
Fig. 4:
dI
30
25
20
15
10
Fig. 6: Softness factor (tb/ta) versus dI
values, per diode).
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
5
0
F
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
/dt (90% confidence, per diode).
IRM(A)
0
S factor
IFM(A)
VR=200V
Tj=125°C
50 100 150 200 250 300 350 400 450 500
50 100 150 200 250 300 350 400 450 500
Peak reverse recovery current versus
Typical values
Tj=125°C
dIF/dt(A/µs)
dIF/dt(A/µs)
VFM(V)
IF=IF(av)
Maximum values
Tj=125°C
IF=2*IF(av)
STTH12003TV
Maximum values
IF=0.5*IF(av)
Tj=25°C
F
/dt (typical
VR=200V
Tj=125°C
3/5