STTH12003TV1 STMicroelectronics, STTH12003TV1 Datasheet - Page 2

• Manufacturer Part Number: STTH12003TV1
• Description: DIODE HI FREQ 300V 60A ISOTOP
• Manufacturer: STMicroelectronics

Specifications of STTH12003TV1

• Voltage - Forward (vf) (max) @ If: 1.25V @ 60A
• Current - Reverse Leakage @ Vr: 120µA @ 300V
• Current - Average Rectified (io) (per Diode): 60A
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 70ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STTH12003TV
THERMAL RESISTANCES
When the diodes 1 and 2 are used simultaneously:
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test : * tp = 5 ms, < 2 %
To evaluate the maximum conduction losses use the following equation:
RECOVERY CHARACTERISTICS
2/5
Symbol
P = 0.75 x I
Tj (diode 1) = P (diode 1) x R
Symbol
Symbol
R
R
S
V
th (j-c)
V
I
I
th (c)
factor
R
trr
tfr
RM
F
FP
**
*
Junction to case
** tp = 380 s, < 2%
Reverse leakage
current
Forward voltage drop
I
I
I
V
Vcc = 200 V
dI
F(AV)
F
F
F
FR
F
= 0.5 A
= 1 A
= 60 A
/dt = 200 A/ s
= 1.1 x V
Parameter
+ 0.0042 x I
dI
F
F
/dt = - 50 A/ s
Irr = 0.25 A
max.
F
th(j-c)
2
I
(RMS)
F
Tests conditions
dI
= 60 A
(per diode) + P (diode 2) x R
F
/dt = 200 A/ s
V
I
F
R
= 60 A
= 300 V
Parameter
V
Tests conditions
I
R
R
= 30 V
= 1A
Tj = 125 C
Tj = 125 C
Tj = 25 C
Tj = 25 C
Tj = 25 C
Tj = 25 C
Tj = 25 C
Tj = 25 C
Tj = 125 C
th(C)
Per diode
Total
Coupling
Min.
Min.
Typ.
Typ.
0.12
0.85
0.3
Value
0.45
0.8
0.1
Max.
Max.
1.25
120
600
1.2
55
70
14
1
5
Unit
Unit
Unit
C/W
mA
ns
ns
V
V
A
-
A