OM7606/BGA2712 NXP Semiconductors, OM7606/BGA2712 Datasheet - Page 2

• Manufacturer Part Number: OM7606/BGA2712
• Description: EVAL BOARD FOR BGA2712
• Manufacturer: NXP Semiconductors
• Type: Amplifierr

Specifications of OM7606/BGA2712

• Frequency: 1GHz ~ 3.2GHz
• For Use With/related Products: BGA2712
• Lead Free Status / RoHS Status: Not applicable / Not applicable
• Other names: 568-4087

NXP Semiconductors
FEATURES
 Internally matched to 50 
 Wide frequency range (3.2 GHz at 3 dB bandwidth)
 Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness)
 5 dBm saturated output power at 1 GHz
 Good linearity (11 dBm IP3
 Unconditionally stable (K > 1.5).
APPLICATIONS
 LNB IF amplifiers
 Cable systems
 ISM
 General purpose.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
2002 Sep 10
V
I
s
NF
P
V
I
P
T
T
P
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
S
S
SYMBOL
SYMBOL
stg
j
S
L(sat)
S
tot
D
MMIC wideband amplifier
21

2
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
DC supply voltage
supply current
total power dissipation
storage temperature
operating junction temperature
maximum drive power
PARAMETER
PARAMETER
(out)
at 1 GHz)
CAUTION
f = 1 GHz
f = 1 GHz
f = 1 GHz
RF input AC coupled
T
s
2
 90 C
PINNING
Marking code: E2-.
CONDITIONS
CONDITIONS
PIN
2, 5
Fig.1 Simplified outline (SOT363) and symbol.
1
3
4
6
Top view
1
6
V
GND2
RF out
GND1
RF in
S
5
2
4
3
MAM455
DESCRIPTION
5
12.3
21.3
3.9
4.8



65


TYP.
MIN.
6
Product specification
4
6




6
35
200
+150
150
10
BGA2712
MAX.
MAX.
1
2, 5
3
V
mA
dB
dB
dBm
V
mA
mW
C
C
dBm
UNIT
UNIT