ESD3V3U1U-02LRH E6327 Infineon Technologies, ESD3V3U1U-02LRH E6327 Datasheet - Page 9

• Manufacturer Part Number: ESD3V3U1U-02LRH E6327
• Description: DIODE TVS 3.3V TSLP-2-7
• Manufacturer: Infineon Technologies

Specifications of ESD3V3U1U-02LRH E6327

• Package / Case: TSLP-2-7
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5V
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Applications: General Purpose
• Number Of Circuits: 1
• Voltage - Working: 3.300V
• Technology: Diode Array
• Polarity: Unidirectional
• Clamping Voltage: 15 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5 V
• Peak Surge Current: 3 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 0.6 mm W x 1 mm L
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Voltage - Clamping: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 3V3U1U02LRHE6327XT; ESD3V3U1U-02LRHE6327INTR; SP000390728

Table 4
Parameter
Line capacitance
Serie inductance
1) Total capacitance line to ground
Table 5
Parameter
Clamping voltage
Forward clamping voltage
Dynamic resistance
1) Please refer to Application Note AN210. TLP parameter: Z
Final Data Sheet
to t
I
PP2
2
= 40 A.
= 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistics between I
RF Characteristics at
ESD Characteristics at
1)
1)
Symbol
C
L
Symbol
V
V
R
S
CL
FC
DYN
L
T
Min.
–
–
–
Min.
–
–
–
–
–
–
A
T
A
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specifie
Typ.
0.4
0.2
0.4
Typ.
19
28
10
17
0.6
0.5
Values
Values
9
0
= 50 Ω , t
Max.
0.6
–
–
Max.
–
–
–
–
–
–
p
= 100ns, t
r
= 300ps, averaging window: t
Unit
pF
nH
nH
Unit
V
V
V
V
Ω
Ω
Revision 1.0, 2011-04-12
ESD3V3U1U Series
Note /
Test Condition
V
ESD3V3U1U-02LS
ESD3V3U1U-02LRH
Note /
Test Condition
I
from Pin 1 to Pin 2
I
from Pin 1 to Pin 2
I
I
from Pin 2 to Pin 1
Pin 1 to Pin 2
Pin 2 to Pin 1
from Pin 2 to Pin 1
PP
PP
PP
PP
R
= 0 V,
= 16 A,
= 30 A,
= 16 A,
= 30 A,
PP1
Characteristics
= 10 A and
f
= 1 MHz
1
= 30 ns