STR912FAW44X6 STMicroelectronics, STR912FAW44X6 Datasheet - Page 71

• Manufacturer Part Number: STR912FAW44X6
• Description: MCU 512KB FLASH 96K RAM 128LQFP
• Manufacturer: STMicroelectronics
• Series: STR9r

Specifications of STR912FAW44X6

• Core Processor: ARM9
• Core Size: 32-Bit
• Speed: 96MHz
• Connectivity: CAN, EBI/EMI, Ethernet, I²C, IrDA, Microwire, SPI, SSI, SSP, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, DMA, Motor Control PWM, POR, PWM, WDT
• Number Of I /o: 80
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 96K x 8
• Voltage - Supply (vcc/vdd): 1.65 V ~ 2 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 128-LQFP
• Processor Series: STR912x
• Core: ARM966E-S
• Data Bus Width: 16 bit, 32 bit
• Data Ram Size: 96 KB
• Interface Type: CAN, I2C, IrDA, SSP, UART, USB
• Maximum Clock Frequency: 96 MHz
• Number Of Programmable I/os: 80
• Number Of Timers: 4
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWARM, EWARM-BL, MCBSTR9, MCBSTR9U, MCBSTR9UME, KSDK-STR912-PLUS, MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: STR9-COMSTICK, STR910-EVAL, STR91X-SK/HIT, STR91X-SK/IAR, STR91X-SK/KEI, STR91X-SK/RAI, STR9-DK/RAIS, STR91X-DK/IAR, STX-PRO/RAIS, STR912-D/RAIS, STR79-RVDK/CPP, STR79-RVDKCPP/9, STR79-RVDK, STR79-RVDK/9, STR9-RVDK/BAS, STR79-RVDK/UPG
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 8 Channel
• Dc: 1020
• For Use With: 497-8267 - BOARD EVAL BASED ON STR9497-8262 - BOARD EVAL BASED ON STR912FAMCBSTR9UME - BOARD EVAL MCBSTR9 + ULINK-MEMCBSTR9U - BOARD EVAL MCBSTR9 + ULINK2MCBSTR9 - BOARD EVAL STM STR9 SERIES497-5067 - BOARD EVAL FOR STR910 FAMILY497-5066 - KIT STARTER KEIL FOR STR910497-5065 - KIT STARTER IAR KICKSTART STR912497-5064 - KIT STARTER FOR STR910 FAMILY497-5046 - KIT TOOL FOR ST7/UPSD/STR7 MCU
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-6284

STR91xFAxxx
Table 25.
1.
Bank erase
Sector erase
Bank program
Sector program
Word program
V
DD
= 1.8 V, V
Flash memory program/erase characteristics (Flash size = 1 MB / 2 MB)
Table 26.
DDQ
Program/erase cycles
Data retention
= 3.3 V
Primary bank (2 Mbytes)
Primary bank (1 Mbytes)
Secondary bank (128 Kbytes)
Of primary bank (64 Kbytes)
Of secondary bank (16 Kbytes)
Primary bank (2 Mbytes)
Primary bank (1 Mbytes)
Secondary bank (128 Kbytes)
Of primary bank (64 Kbytes)
Of secondary bank (16 Kbytes)
Parameter
Parameter
,
T
A
= 2 5°C.
Flash memory endurance
Per word
Doc ID 13495 Rev 6
Test conditions
Half word (16 bits)
Test conditions
Typ
1300
1060
100K
500
500
120
Min
2.5
7.5
32
16
15
20
8
(1)
Typ after 100K
W/E cycles
Electrical characteristics
Value
Typ
Value
1400
1140
600
520
130
36
18
20
10
3
9
(1)
Max
1800
1380
Max
850
640
160
46
23
22
11
11
4
cycles
years
Unit
71/102
Unit
ms
ms
ms
ms
ms
µs
s
s
s
s
s