NIF9N05CL ON Semiconductor, NIF9N05CL Datasheet - Page 3

• Manufacturer Part Number: NIF9N05CL
• Description: Protected Power MOSFET
• Manufacturer: ON Semiconductor

MOSFET ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
SOURCE−DRAIN DIODE CHARACTERISTICS
ESD CHARACTERISTICS
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Gate Charge
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
Electro−Static Discharge Capability
Characteristic
I
S
I
S
= 2.6 A, V
Human Body Model (HBM)
dI
= 2.6 A, V
V
V
V
V
V
I
D
I
GS
GS
I
GS
GS
I
s
GS
Machine Model (MM)
D
D
S
/dt = 100 A/ms (Note 3)
I
I
= 2.6 A, R
D
D
= 2.6 A, R
= 1.0 A, R
= 1.5 A, V
= 4.5 V, V
= 4.5 V, V
= 4.5 V, V
= 4.5 V, V
= 10 V, V
(T
= 2.6 A (Note 3)
= 1.5 A (Note 3)
J
GS
= 25°C unless otherwise noted)
http://onsemi.com
GS
= 0 V, T
NIF9N05CL
= 0 V (Note 3)
D
D
GS
D
DD
DD
DD
DS
DS
= 15.4 W
= 5.8 W
= 40 W
= 0 V,
= 15 V,
= 40 V,
= 15 V,
= 40 V,
= 40 V,
J
3
= 125°C
Symbol
t
t
t
t
t
t
Q
ESD
V
d(on)
d(on)
d(on)
d(off)
d(off)
d(off)
Q
Q
Q
Q
Q
Q
t
t
t
t
t
t
t
t
t
SD
rr
RR
a
b
r
f
r
f
r
f
T
1
2
T
1
2
5000
Min
500
1418
1120
1165
1273
1540
1000
0.81
0.66
275
780
242
906
107
290
730
200
530
Typ
4.5
0.9
2.6
3.9
1.0
1.7
6.3
2400
1320
1900
Max
465
7.0
1.5
Unit
nC
nC
mC
ns
ns
ns
ns
V
V