IXGR50N60B IXYS, IXGR50N60B Datasheet
IXGR50N60B
Specifications of IXGR50N60B
Related parts for IXGR50N60B
IXGR50N60B Summary of contents
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... GE = 500 µ 600V CES ± GES CE(sat © 2004 IXYS All rights reserved IXGR 50N60B IXGR 50N60BD1 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 200 = 10 Ω 100 0.8 V CES 250 -55 ... +150 150 -55 ... +150 300 2500 Characteristic Values (T = 25°C, unless otherwise specified) J Min ...
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... -di/dt = 200 A/ms thJC Note 50A T IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. ...
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... V = 15V J GE 13V 80 11V Volts CE Fig. 3. Saturation Voltage Characteristics 100 V = 10V 125° Volts GE Fig. 5. Saturation Voltage Characteristics © 2004 IXYS All rights reserved V = 15V GE 13V 11V 25° IXGR 50N60B IXGR 50N60BD1 200 T = 25°C J 11V V = 15V GE 13V 160 120 80 ...
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T = 125° 4.7Ω Amperes C Fig. 7. Dependence of E and =50A 250V CE 15 ...
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... T VJ Fig. 15 Dynamic parameters versus K/W 0.1 Z thJC 0.01 0.001 0.0001 0.00001 0.0001 0.001 Fig. 18 Transient thermal resistance junction to case © 2004 IXYS All rights reserved 4000 T = 100° 300V nC R 3000 I =120A 60A 30A F 2000 1000 0 100 ...