IRFP044 Vishay, IRFP044 Datasheet

MOSFET N-CH 60V 57A TO-247AC

IRFP044

Manufacturer Part Number
IRFP044
Description
MOSFET N-CH 60V 57A TO-247AC
Manufacturer
Vishay
Datasheet

Specifications of IRFP044

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28 mOhm @ 34A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
57A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
95nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 25V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFP044

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91197
S09-0064-Rev. A, 02-Feb-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 52 A, dI/dt ≤ 250 A/µs, V
= 25 V, starting T
TO-247
(Ω)
G
D
a
S
J
= 25 °C, L = 19 µH, R
c
DD
b
V
GS
≤ V
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
≤ 175 °C.
60
95
27
46
G
= 25 Ω, I
D
S
C
Power MOSFET
0.028
= 25 °C, unless otherwise noted
V
GS
AS
6-32 or M3 screw
at 10 V
= 57 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-247
IRFP044PbF
SiHFP044-E3
IRFP044
SiHFP044
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Isolated Central Mounting Hole
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because its isolated mounting hole.
It also provides greater creepage distances between pins to
meet the requirements of most safety specifications.
SYMBOL
T
dV/dt
J
V
V
E
I
P
, T
device
I
DM
DS
GS
AS
D
D
stg
IRFP044, SiHFP044
design,
- 55 to + 175
LIMIT
300
± 20
230
180
1.2
4.5
1.1
60
57
40
53
10
low
Vishay Siliconix
d
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
°C
W
V
A
Available
and
1

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IRFP044 Summary of contents

Page 1

... TO-247 IRFP044PbF SiHFP044-E3 IRFP044 SiHFP044 = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω (see fig. 12 ≤ 175 ° IRFP044, SiHFP044 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT ± 230 DM 1 180 D dV/dt 4 ...

Page 2

... IRFP044, SiHFP044 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91197 S09-0064-Rev. A, 02-Feb- °C Fig Typical Transfer Characteristics C = 175 °C Fig Normalized On-Resistance vs. Temperature C IRFP044, SiHFP044 Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFP044, SiHFP044 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91197 S09-0064-Rev. A, 02-Feb-09 ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91197 S09-0064-Rev. A, 02-Feb- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms IRFP044, SiHFP044 Vishay Siliconix D.U. d(off www.vishay.com 5 ...

Page 6

... IRFP044, SiHFP044 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91197 ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRFP044, SiHFP044 Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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