CA3227E Intersil, CA3227E Datasheet - Page 2

• Manufacturer Part Number: CA3227E
• Description: IC TRANS ARRAY NPN HI-FREQ 16DIP
• Manufacturer: Intersil

Specifications of CA3227E

• Rohs Status: RoHS non-compliant
• Other names: CA3227

Absolute Maximum Ratings
Collector to Emitter Voltage (V
Collector to Base Voltage (V
Collector to Substrate Voltage (V
Collector Current (I
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
NOTE:
DC CHARACTERISTICS FOR EACH TRANSISTOR
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Collector to Substrate Breakdown Voltage V
Emitter Cutoff Current (Note 3)
Collector Cutoff Current
Collector Cutoff Current
DC Forward Current Transfer Ratio
Base to Emitter Voltage
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
1. The collector of each transistor of these devices is isolated from the substrate by an integral diode. The substrate (Terminal 5) must be connected
2.
3. On small-geometry, high-frequency transistors, it is very good practice never to take the Emitter Base Junction into reverse breakdown. To do
to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
so may permanently degrade the h
electrostatic discharge and transients in the circuits in which they are used. Moreover, CMOS handling procedures should be employed.
JA
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
PARAMETER
C
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
CBO
CEO
) . . . . . . . . . . . . . . . . . . . . . . . 12V
CIO
2
). . . . . . . . . . . . . . . . . . . . . . . 8V
T
, Note 1) . . . . . . . . . . . . . . 20V
A
= 25
FE
. Hence, the use of I
o
C
V
V
I
I
I
h
V
V
V
EBO
CEO
CBO
FE
SYMBOL
(BR)CBO
(BR)CEO
(BR)CIO
BE
CE SAT
BE SAT
o
C to 125
I
I
I
V
V
V
V
V
I
I
C
C
C1
C
C
EB
CE
CB
CE
CE
= 10 A, I
= 1mA, I
= 10mA, I
= 10mA, I
EBO
= 10 A, I
= 4.5V, I
= 5V, I
= 8V, I
= 6V
= 6V
o
C
CA3227
rather than V
TEST CONDITIONS
B
B
E
E
B
B
B
= 0
C
= 0
= 0
= 0
= 1mA
= 1mA
= 0, I
= 0
Thermal Information
Thermal Resistance (Typical, Note 2)
Maximum Power Dissipation (Any One Transistor) . . . . . . . . 85mW
Maximum Junction Temperature (Die). . . . . . . . . . . . . . . . . . 175
Maximum Junction Temperature (Plastic Package). . . . . . . . 150
Maximum Storage Temperature Range . . . . . . . . . . -65
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300
E
(BR)EBO
16 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .
(SOIC - Lead Tips Only)
I
I
I
I
= 0
C
C
C
C
= 10mA
= 1mA
= 0.1mA
= 1mA
. These devices are also susceptible to damage by
0.62
MIN
12
20
40
0.74
8
-
-
-
-
-
-
TYP
0.71
0.13
110
150
150
20
10
-
-
-
-
-
MAX
0.82
0.50
0.94
100
10
1
-
-
-
-
-
-
o
C to 150
JA
UNITS
185
(
nA
o
V
V
V
V
V
V
A
A
C/W)
o
o
o
o
C
C
C
C