MAX17009GTL+T Maxim Integrated Products, MAX17009GTL+T Datasheet - Page 9

• Manufacturer Part Number: MAX17009GTL+T
• Description: IC CTLR VIDEO SERIAL DUAL 40TQFN
• Manufacturer: Maxim Integrated Products

Specifications of MAX17009GTL+T

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 2, V
GND_, FBDC_ = FBAC_ = CSP_ = CSN_ = 1.2V, all DAC codes set to the 1.2V code, T
(Note 2)
FAULT DETECTION
Output Overvoltage Trip
Threshold
Output Undervoltage-Protection
Trip Threshold
PWRGD Threshold
PWRGD Output Low Voltage
VRHOT Trip Threshold
VRHOT Output Low Voltage
GATE DRIVERS
DH_ Gate-Driver On-Resistance
DL_ Gate-Driver On-Resistance
Dead Time
Internal Boost Diode Switch R
2-WIRE SVI BUS LOGIC INTERFACE
SVI Logic Input Threshold
SVC Clock Frequency
START Condition Hold Time
Repeated START Condition
Setup Time
STOP Condition Setup Time
Data Hold
Data Setup Time
SVC Low Period
SVC High Period
SVC/SVD Rise and Fall Time
PARAMETER
_______________________________________________________________________________________
IN
= 12V, V
ON
CC
= V
SYMBOL
AMD Mobile Serial VID Dual-Phase
R
R
t
t
t
t
t
DD1
t
t
ON(DH
HD,DAT
V
ON(DL
HD,STA
SU,STO
SU,DAT
SU,STA
DH
DL
t
V
t
t
f
HIGH
LOW
R
OVP_
SVC
UVP
_
, t
_
DH
= V
DL
F
_
_
)
)
DD2
Measured at FBDC_,
rising edge
Measured at FBDC_ with respect to
unloaded output voltage
Measured at FBDC_
with respect to
unloaded output
voltage
15mV hysteresis
(typ)
I
Measured at THRM, with respect to V
falling edge, 115mV hysteresis (typ)
I
BST_ - LX_ forced
to 5V
DL_, high state
DL_, low state
DH_ low to DL_ high
DL_ low to DH_ high
BST1 to V
with 10mA of current
SVC, SVD, rising edge,
hysteresis = 0.15 x V
A m aster device must i nternal ly p rovid e a hold
tim e of at l east 300ns for the SD A sig nal (r efer r ed
to the V
r eg ion of S CL’s fal li ng ed ge
Measured from 10% to 90% of V
SINK
SINK
= SHDN = PGD_IN = 5V, V
= 4mA
= 4mA
IL
Fixed-Frequency Controller
of S CK sig nal ) to b ri dg e the und efi ned
DD1
, BST2 to V
CONDITIONS
DDIO
Normal operation
Lower threshold,
falling edge
(undervoltage)
Upper threshold,
rising edge
(overvoltage)
High state (pullup)
Low state (pulldown)
DD2
, measured
DDIO
DDIO
= 1.8V, PRO = OPTION = GNDS_NB = GNDS_ =
CC
A
= -40°C to +105°C, unless otherwise noted.)
,
V
+150
0.3 x
-450
-350
29.5
MIN
250
160
160
160
160
DDIO
15
10
60
9
V
+250
MAX
0.7 x
-350
-250
30.5
350
DDIO
0.4
0.4
2.0
2.0
2.0
0.6
3.4
40
40
20
70
40
UNITS
MHz
mV
mV
ns
ns
ns
ns
ns
ns
ns
ns
ns
%
Ω
Ω
Ω
V
V
V
V
9