TLP227G-2(TP1,N) Toshiba, TLP227G-2(TP1,N) Datasheet - Page 24
![PHOTOCOUPLER RELAY SSR 8-SMD](/photos/7/67/76736/tp1__8-smd_sml.jpg)
TLP227G-2(TP1,N)
Manufacturer Part Number
TLP227G-2(TP1,N)
Description
PHOTOCOUPLER RELAY SSR 8-SMD
Manufacturer
Toshiba
Series
TLP227G-2r
Specifications of TLP227G-2(TP1,N)
Circuit
DPST (2 Form A)
Output Type
AC, DC
On-state Resistance
35 Ohm
Load Current
120mA
Voltage - Input
1.15VDC
Voltage - Load
0 ~ 350 V
Mounting Type
Surface Mount
Termination Style
Gull Wing
Package / Case
8-SMD (300 mil)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TLP227G2TR
4
Photocouplers for IGBT/MOSFET Gate Drive
*Under development. Specifications subject to change without notice. For the latest information, please contact your nearest Toshiba sales representative.
Note 1: The EN60747-5-2 safety standard for compact packages is different from that for standard DIP packages.
Note 2: BSI and IEC: : Approved (supplementary or basic insulation)
TLP151*
TLP151A*
TLP155E
TLP2451
TLP2451A*
TLP350
TLP350F
TLP350H*
TLP350HF*
TLP351
TLP351F
TLP351A*
TLP351AF*
TLP351H*
TLP351HF*
TLP352*
TLP352F*
Part Number
Since the mini-flat package is a compact package, please contact your nearest Toshiba sales representative for more details.
TÜV and VDE: : Approved
For the latest information, please contact your nearest Toshiba sales representative.
Selection Guide
EN 60065- and IEC 60065-approved, EN 60950- and IEC 60950-approved
EN 60747-5-2-approved with option V4 or D4
Pin Configuration
8
1
8
1
8
1
8
1
8
1
8
1
8
1
6
1
6
1
7
2
7
2
7
2
7
2
7
2
7
2
7
2
5
5
6
3
6
3
6
3
: Design which meets safety standard/approval pending as of January 2011
6
3
6
3
6
3
6
3
4
3
4
3
5
4
5
4
5
4
5
4
5
4
5
4
5
4
SO6 (reinforced Insulation)
T
Direct drive of a
small-power
IGBT/MOSFET
SO6 (reinforced Insulation)
T
Direct drive of a
small-power
IGBT/MOSFET
SO8
T
Direct drive of a
small-power
IGBT/MOSFET
High CMR
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
High CMR
Low power dissipation
DIP8
T
Direct drive of a
medium-power
IGBT/MOSFET
High CMR
DIP8
Direct drive of a
small-power
IGBT/MOSFET
Low power dissipation
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
T
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
DIP8
T
Direct drive of a
small-power
IGBT/MOSFET
High CMR
opr
opr
opr
opr
opr
opr
= 110°C (max)
= 100°C (max)
= 125°C (max)
= 125°C (max)
= 125°C (max)
= 125°C (max)
Features
: Approved (reinforced insulation)
Delay Time (Max)
Propagation
0.7 μs
0.5 μs
0.2 μs
0.7 μs
0.5 μs
0.5 μs
0.5 μs
0.7 μs
0.7 μs
0.7 μs
0.2 μs
24
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Output
±0.6 A
±0.6 A
±0.6 A
±2.5 A
±2.5 A
±2.5 A
±0.6 A
±0.6 A
±6.0 A
: Design which meets safety standard/approval pending as of January 2011
5 mA
7.5 mA
5 mA
5 mA
5 mA
(Max)
5 mA
5 mA
5 mA
5 mA
I
FHL
Vrms
Vrms
Vrms
Vrms
Vrms
3750
3750
3750
3750
3750
3750
Vrms
3750
Vrms
3750
Vrms
3750
Vrms
BVs
UL/cUL TÜV
/
/
/
/
/
/
/
/
/
/
/
Safety Standards
VDE
(1)
(1)
BSI
(2)
IEC