GU-E 1 Form B (AQV414E, AQV41❍EH)
TYPES
*Indicate the peak AC and DC values.
Note: The surface mount terminal shape indicator “A” and the packing style indicator “X” or “Z” are not marked on the relay.
RATING
1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)
Input
Output
Total power dissipation
I/O isolation voltage
Temperature
limits
dual use
Compliance with RoHS Directive
AC/DC
.346
8.8
(Reinforced)
I/O isolation
1,500 V AC
5,000 V AC
(Standard)
voltage
1
2
3
LED forward current
LED reverse voltage
Peak forwrd current
Power dissipation
Load voltage (peak AC)
Continuous load
current
Peak load current
Power dissipation
Operating
Storage
Item
6.4
.252
3.9
.154
voltage
.346
400 V
350 V
400 V
Load
8.8
60 V
Output rating*
6
5
4
120 mA
550 mA
130 mA
120 mA
current
Load
6.4
.252
Symbol
mm
I
P
V
T
T
V
P
I
V
peak
P
I
I
3.6
.142
FP
opr
F
out
iso
stg
L
R
in
L
T
DIP6-pin
All Rights Reserved © COPYRIGHT Panasonic Electric Works Co., Ltd.
inch
Package
connection
Type of
A
B
C
FEATURES
1. High cost-performance type of
PhotoMOS relay 1 Form B output
2. 60V type couples high capacity
(0.55A) with low on-resistance (typ. 1Ω).
3. Low on-resistance
This has been realized thanks to the
built-in MOSFET processed by our
proprietary method, DSD (Double-
diffused and Selective Doping) method.
4. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.
Through hole
Cross section of the normally-closed type of
power MOS
AQV412EH
AQV410EH
AQV414EH
Normally closed DIP6-pin
AQV414E
terminal
AQV414E(A)
1,500 V AC
reinforced insulation
Tube packing style
N
economic type with
0.12 A
0.13 A
0.15 A
+
400 V
0.3 A
Source electrode
P
+
N
+
N –
–40°C to +100°C
AQV412EHA
AQV410EHA
AQV414EHA
–40°C to +85°C
N
Passivation membrane
AQV414EA
AQV412EH(A) AQV410EH(A) AQV414EH(A)
+
0.55 A
0.65 A
Gate electrode
0.8 A
1.5 A
60 V
N
+
P
+
Part No.
500 mW
550 mW
N
Surface-mount terminal
75 mW
+
50 mA
5 V
1 A
–40°F to +185°F
Picked from the
–40°F to +212°F
AQV412EHAX
AQV410EHAX
AQV414EHAX
1/2/3-pin side
AQV414EAX
5,000 V AC
Intermediate
insulating
membrane
Drain
electrode
Tape and reel packing style
Gate
oxidation
membrane
0.13 A
0.15 A
0.17 A
350 V
0.4 A
(AQV412EH)
VDE
(Standard type)
Picked from the
AQV412EHAZ
AQV410EHAZ
AQV414EHAZ
4/5/6-pin side
AQV414EAZ
5. High sensitivity and low on-
resistance
Can control max. 0.55 A load current with
5 mA input current.
Low on-resistance of typ. 1Ω
(AQV412EH).
6. Low-level off-state leakage current
of max. 1 µA (AQV414E)
7. Reinforced insulation 5,000 V type
also available
More than 0.4 mm internal insulation
distance between inputs and outputs.
Conforms to EN41003, EN60950
(reinforced insulation).
TYPICAL APPLICATIONS
• Power supply
• Measuring equipment
• Security equipment
• Telephone equipment
• Sensing equipment
0.12 A
0.13 A
0.15 A
400 V
0.3 A
(AQV414E, AQV41❍EH)
GU-E 1 Form B
f = 100 Hz, Duty factor = 0.1%
A connection: Peak AC, DC
B,C connection: DC
A connection: 100 ms (1 shot), V
Non-condensing at low temperatures
1 batch contains:
1 tube contains:
(AQV410EH, 414EH) (AQV410EH, 414EH)
500 pcs.
50 pcs.
Tube
TESTING
Packing quantity
Remarks
VDE
Tape and reel
(Reinforced type)
1,000 pcs.
L
= DC