ZXSC310EV Diodes Zetex, ZXSC310EV Datasheet - Page 3

• Manufacturer Part Number: ZXSC310EV
• Description: BOARD EVALUATION FOR ZXSC310E5TA
• Manufacturer: Diodes Zetex

Specifications of ZXSC310EV

• Outputs And Type: 1, Non-Isolated
• Features: Programmable output current
• Voltage - Input: 0.8 ~ 8 V
• Utilized Ic / Part: ZXSC310
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

FMMT618
For the circuits described in the applications section
Zetex FMMT618 is the recommended pass transistor.
ELECTRICAL CHARACTERISTICS:
Test conditions unless otherwise stated: T
5
ZHCS1000
For the maximum brightness circuit described in the
applications section Zetex ZHCS1000 is the
recommended Schottky diode.
ELECTRICAL CHARACTERISTICS:
Test conditions unless otherwise stated: T
ISSUE 3 - SEPTEMBER 2007
Measured under pulse conditions. Pulse width=300µs. Duty cycle
Symbol
V
V
Symbol
V
t
I
ZHCS2000
ZHCS1000
R
ZHCS750
ZHCS500
ZHCS400
rr
CE(sat)
(BR)CEO
Number
F
BAT54
Part
Max.
Parameter
Collector-Emitter
Saturation Voltage
Collector-Emitter
Breakdown Voltage
Parameter
Forward voltage
Reverse Recovery Time
Reverse Current
40
40
40
V
30
40
40
V
R
Max.
2000
1000
mA
200
750
500
400
I
F
Max.
6.75
6.75
I
0.6
FSM
20
12
12
A
5
5
Max.
500
500
500
540
550
500
mV
V
F
at
2000
1000
mA
750
500
400
30
Conditions
I
I
Switched from I
I
Measured at I
V
Conditions
I
I
I
I
I
F
F
R
C
C
C
C
F
R
=500mA.
=0.1A, I
=1A, I
=2.5A, I
=10mA
= 500mA
= 1A
= 30V
AMB
AMB
Max.
1000
250
100
100
40
40
3
B
A
=25 C
=10mA
=25 C
The following indicates outline data for the device,
m ore detailed i nform a tion can be found at
www.zetex.com/fmmt618
The following indicates outline data for the ZHCS, more
detailed
www.zetex.com/zhcs1000
B
B
I
=10mA
=50mA
R
at
R
V
25
30
30
30
30
30
=50mA
V
F
R
=500mA to
2%
i nform a tion
at V
R
Capacitance
= 25V, f = 1MHz
Min
Typ.
Min
20
pF
10
60
25
25
20
20
can
Typ
130
Typ
70
27
S E M I C O N D U C T O R S
12
50
8
ZXSC310
be
Max
150
200
Max
400
500
100
15
found
SOT23-6
Package
SOT323
SOT23
SOT23
SOT23
SOT23
SOT23
Units
Units
mV
mV
µA
ns
V
at