NCP5005GEVB ON Semiconductor, NCP5005GEVB Datasheet - Page 7

• Manufacturer Part Number: NCP5005GEVB
• Description: EVAL BOARD FOR NCP5005G
• Manufacturer: ON Semiconductor

Specifications of NCP5005GEVB

• Design Resources: NCP5005 EVB BOM NCP5005GEVB Gerber Files NCP5005 EVB Schematic
• Outputs And Type: 1, Non-Isolated
• Voltage - Output: 22V
• Voltage - Input: 3.6V
• Utilized Ic / Part: NCP5005
• Core Chip: NCP5005
• Topology: Boost
• No. Of Outputs: 1
• Development Tool Type: Hardware - Eval/Demo Board
• Leaded Process Compatible: Yes
• Mcu Supported Families: NCP5005SNT1G
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Features: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• For Use With/related Products: NCP5005G
• Other names: NCP5005GEVBOS

shows a non-negligible spike when the inductor current hits
the maximum peak value (Figure 7).
for the NCP5007 application, and a similar voltage spike is
developed with 800 mVpp amplitude.
the PWM mode and the NCP5007 from a power device
standpoint, is the R
A detailed view of the PWM based chip output voltage
Basically, this is the same mechanism as the one depicted
Leaving aside the structure, the main difference between
DS(on)
Figure 7. PWM Chip Output Voltage Noise as the NMOS is Switched Off
of the internal NMOS. We have
http://onsemi.com
AND8172/D
7
1.7 W, compared to 0.5 W for the PWM chip. The
consequence is twofold:
1. With a lower R
2. Similarly, lower R
probably larger Cdg, Cgs and Cds capacitances,
thus slower dI/dt. Consequently, slower dI/dt
minimizes the effect of the parasitic inductance.
spike for the same amount of energy transferred
from the stray capacitance.
DS(on)
DS(on)
, the PWM based chip has
generates lower voltage