LM3509SDEV National Semiconductor, LM3509SDEV Datasheet - Page 4

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LM3509SDEV

Manufacturer Part Number
LM3509SDEV
Description
BOARD EVALUATION FOR LM3509SD
Manufacturer
National Semiconductor
Series
PowerWise®r
Datasheets

Specifications of LM3509SDEV

Current - Output / Channel
40mA
Outputs And Type
2, Non-Isolated
Voltage - Output
21V
Features
Dimmable, I²C Interface
Voltage - Input
2.7 ~ 5.5V
Utilized Ic / Part
LM3509
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.national.com
I
I
V
I
V
V
V
R
I
V
f
D
D
I
I
LED
LED-MATCH
LED
CL
SW
Q
SHDN
SET
REG_CS
REG_OLED
HR
OVP
DSON
MAX
MIN
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
Specifications in standard type face are for T
of T
12.0kΩ, OLED = ‘0’, ENM = ENS = ‘1’, BSUB = BMAIN = Full Scale.(Notes 2, 7)
V
V
V
V
V
Continuous Power Dissipation
Junction Temperature (T
Storage Temperature Range
Maximum Lead Temperature
(Soldering, 10s)(Note 3)
ESD Rating(Note 10)
Human Body Model
/I
Symbol
IN
SW
SUB/FB
SCL
SET
SET
A
, V
, V
= −40°C to +85°C. Unless otherwise specified V
OVP
, V
SDA
MAIN
,
, V
RESET\GPIO
Output Current Regulation
MAIN or SUB/FB Enabled
Maximum Current Per
Current Sink
I
Matching
SET Pin Voltage
I
Ratio
Regulated Current Sink
Headroom Voltage
V
in OLED Mode
Current Sink Minimum
Headroom Voltage
NMOS Switch On
Resistance
NMOS Switch Current Limit V
Output Over-Voltage
Protection
Switching Frequency
Maximum Duty Cycle
Minimum Duty Cycle
Quiescent Current, Device
Not Switching
Shutdown Current
MAIN
LED
SUB/FB
Current to I
to I
Regulation Voltage
, V
Parameter
SUB/FB
J-MAX
IO
,
)
Current
SET
Current
Internally Limited
-65ºC to +150º C
A
UNI = ‘0’, or ‘1’
R
UNI = ‘1’ (Note 11)
3.0V < V
3.0V < V
I
I
ON Threshold
OFF Threshold
V
V
0x00
V
OLED=’1’, ENM=ENS=’0’
ENM = ENS = OLED = '0'
−0.3V to 25V
−0.3V to 23V
LED
SW
= 25°C and those in boldface type apply over the Operating Temperature Range
IN
MAIN
REG_CS
SUB/FB
SET
−0.3V to 6V
−0.3V to 6V
(Notes 1, 2)
= 100mA
= 3.0V
= 95% of nominal
= 8.0kΩ
and V
+150ºC
+300°C
> V
2.5kV
, BSUB = BMAIN =
IN
IN
Conditions
IN
= 3.6V, V
< 5.5V, OLED = ‘1’
< 5V
REG_OLED
SUB/FB
4
>
IO
,
= 1.8V, V
Operating Ratings
Thermal Properties
ESD Caution Notice
National Semiconductor recommends that all integrated cir-
cuits be handled with appropriate ESD precautions. Failure to
observe proper ESD handling techniques can result in dam-
age to the device.
V
V
V
Junction Temperature Range
(T
Ambient Temperature Range
(T
Junction to Ambient Thermal
Resistance (θ
IN
SW
SUB/FB
J
A
)(Note 4)
)(Note 5)
, V
OVP
, V
RESET/GPIO
1.172
MAIN
,
18.6
21.2
19.7
Min
650
1.0
JA
)(Note 6)
= V
IN
1.244
, V
0.15
1.21
0.58
20.6
1.27
Typ
192
500
300
770
400
250
3.6
20
30
22
90
10
SUB/FB
(Notes 1, 2)
= V
MAIN
1.239
Max
21.8
22.9
21.2
875
440
305
1.4
1
5
= 0.5V, R
-40ºC to +110ºC
-40ºC to +85ºC
2.7V to 5.5V
0V to 23V
0V to 21V
54°C/W
SET
Units
MHz
=
mA
mV
mV
mA
µA
µA
%
%
%
V
V
V

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