LM4995TMBD National Semiconductor, LM4995TMBD Datasheet - Page 3

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LM4995TMBD

Manufacturer Part Number
LM4995TMBD
Description
BOARD EVALUATION LM4995TM
Manufacturer
National Semiconductor
Series
Boomer®, PowerWise®r
Datasheet

Specifications of LM4995TMBD

Amplifier Type
Class AB
Output Type
1-Channel (Mono)
Max Output Power X Channels @ Load
1.3W x 1 @ 8 Ohm
Voltage - Supply
2.4 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Board Type
Fully Populated
Utilized Ic / Part
LM4995
Lead Free Status / RoHS Status
Not applicable / Not applicable
I
I
V
P
T
THD+N
PSRR
V
V
I
I
V
P
T
THD+N
PSRR
V
V
DD
SD
DD
SD
Symbol
Symbol
WU
WU
OS
o
SDIH
SDIL
OS
o
SDIH
SDIL
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
Storage Temperature
Input Voltage
Power Dissipation
11)
ESD Susceptibility
ESD Susceptibility
Electrical Characteristics V
The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for T
Electrical Characteristics V
The following specifications apply for the circuit shown in Figure 1, unless otherwise specified. Limits apply for T
Quiescent Power Supply Current
Shutdown Current
Output Offset Voltage
Output Power
Wake-up time
Total Harmonic Distortion + Noise
Power Supply Rejection Ratio
Shutdown Voltage Input High
Shutdown Voltage Input Low
Quiescent Power Supply Current
Shutdown Current
Output Offset Voltage
Output Power
Wake-up time
Total Harmonic Distortion + Noise
Power Supply Rejection Ratio
Shutdown Voltage Input High
Shutdown Voltage Input Low
(Note
(Note
(Note
(Note
10)
Parameter
Parameter
3,
4)
5)
Note
−0.3V to V
−65°C to +150°C
Internally Limited
DD
DD
V
V
V
No Load
THD+N = 1% (max); f = 1 kHz
P
V
Input terminated to GND
(Note
V
V
V
No Load
THD+N = 1% (max); f = 1 kHz
P
V
Input terminated to GND
IN
IN
SD
o
ripple
IN
IN
SD
o
ripple
= 500mW
= 5V
= 3.6V
= 0V, I
= 0V, I
DD
= 300mW
= V
= 0V, I
= 0V, I
= V
= 200mV sine p-p
2000V
2)
+0.3V
= 200mV sine p-p
200V
GND
6.0V
GND
Conditions
o
o
o
o
= 0A, No Load
= 0A, 8Ω Load
RMS
= 0A, No Load
= 0A, 8Ω Load
(Note
Conditions
RMS
(Note
; f = 1kHz
3
; f = 1kHz
1,
Temperature Range
Supply Voltage
Junction Temperature
Thermal Resistance
 θ
 θ
Operating Ratings
Note
1,
T
JA
JA
MIN
Note
(TM)
(SD)
2)
T
2)
A
73 (f = 217Hz)
73 (f = 1kHz)
T
MAX
1.25 (SD)
1.3 (TM)
(Note
Typical
75 (f = 217Hz)
76 (f = 1kHz)
0.01
0.08
165
1.5
1.8
1.5
1.2
5
625 (TM)
610 (SD)
(Note
Typical
6)
0.01
0.07
130
1.3
1.6
1.3
LM4995
5
1
6)
LM4995
(Note
(Note
Limit
2.5
26
8)
1
7,
Limit
−40°C
2.4V
Note
2.3
26
8)
7,
1
A
A
Note
= 25°C.
= 25°C.
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V
T
96.5°C/W
DD
mA (max)
mV (max)
µA (max)
A
(Limits)
mA (max)
mV (max)
µA (max)
56°C/W
Units
(Limits)
mA
150°C
ms
Units
dB
W
%
V
V
mW
mA
85°C
ms
dB
5.5V
%
V
V

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