KIT33984PNAEVB Freescale Semiconductor, KIT33984PNAEVB Datasheet - Page 11

• Manufacturer Part Number: KIT33984PNAEVB
• Description: KIT PRELIM EVALUATION MC3398PNA
• Manufacturer: Freescale Semiconductor
• Type: Other Power Managementr

Specifications of KIT33984PNAEVB

• Main Purpose: Power Management, High Side Driver (Internal FET)
• Embedded: No
• Utilized Ic / Part: MC33984
• Primary Attributes: Output current monitoring, 2 SPI-selectable current ratios
• Secondary Attributes: SPI control of over-current limit, open load detection, output ON/OFF, slew rates
• Input Voltage: 6 V to 27 V
• Interface Type: SPI
• Product: Power Management Modules
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With/related Products: MC33984

Table 4. Static Electrical Characteristics (continued)
Analog Integrated Circuit Device Data
Freescale Semiconductor
Typical values noted reflect the approximate parameter mean at T
Control Interface
Notes
Input Logic High Voltage
Input Logic Low Voltage
Input Logic Voltage Hysteresis
Input Logic Pull-down Current (SCLK, IN, SI)
RST
SO,
Input Logic Pull-down Resistor (
Input Capacitance
WAKE Input Clamp Voltage
WAKE Input Forward Voltage
SO High-state Output Voltage
FS
SO Tri-state Leakage Current
Input Logic Pull-up Current
FSI Input Pin External Pull-down Resistance
13.
14.
15.
16.
17.
Characteristics noted under conditions 4.5 V ≤ V
, SO Low-state Output Voltage
I
I
I
I
CS
CS
FSI Disabled, HS[0:1] Indeterminate
FSI Enabled, HS[0:1] OFF
FSI Enabled, HS0 ON, HS1 OFF
FSI Enabled, HS[0:1] ON
CL(WAKE)
CL(WAKE)
OH
OL
FS
Input Voltage Range
, V
Upper and lower logic threshold voltage range applies to SI,
signals may be supplied by a derived voltage reference to V
No hysteresis on FSI and WAKE pins. Parameter is guaranteed by processing monitoring but is not production tested.
Input capacitance of SI,
The current must be limited by a series resistance when using voltages > 7.0 V.
Pull-up current is with
> 0.7 V
= -1.6 mA
= 1.0 mA
Tri-state Capacitance
IN[0:1]
< 2.5 mA
= - 2.5 mA
DD
> 0.7 x V
(15)
DD
(13)
(13)
(17)
(16)
CS
(15)
Characteristic
(14)
CS
RST
OPEN.
, SCLK,
) and WAKE
CS
RST
has an active internal pull-up to V
, and WAKE. This parameter is guaranteed by process monitoring but is not production tested.
DD
≤ 5.5 V, 6.0 V ≤ V
PWR
CS
, SCLK,
.
A
= 25°C under nominal conditions, unless otherwise noted.
DD
PWR
RST
V
.
V
RFSoffoff
RFSonoff
RFSonon
IN[0:1] (HYS)
V
I
Symbol
SO(LEAK)
CL(WAKE)
RFSdis
F(WAKE)
R
V
V
V
≤ 27 V, -40°C ≤ T
I
, IN[0:1], and WAKE input signals. The WAKE and
RFS
C
DWN
V
C
V
I
DWN
SOH
RST
SOL
UP
SO
IH
IN
IL
STATIC ELECTRICAL CHARACTERISTICS
0.7 x V
0.8 x V
- 2.0
- 5.0
Min
100
100
5.0
4.5
7.0
5.0
6.0
15
40
–
–
–
–
–
A
DD
DD
≤ 125°C, unless otherwise noted.
ELECTRICAL CHARACTERISTICS
Infinite
Typ
600
200
5.0
4.0
0.2
6.5
17
–
–
–
–
–
–
–
0
–
0
0.2 x
1200
Max
V
- 0.3
400
5.5
0.4
5.0
1.0
7.0
20
20
12
14
20
19
–
–
–
DD
Unit
RST
mV
μA
kΩ
μA
μA
kΩ
pF
pF
V
V
V
V
V
V
V
33984
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