KIT33887PNBEVB Freescale Semiconductor, KIT33887PNBEVB Datasheet - Page 9

• Manufacturer Part Number: KIT33887PNBEVB
• Description: KIT EVAL 33887 5A H-BRIDGE PQFN
• Manufacturer: Freescale Semiconductor

Specifications of KIT33887PNBEVB

• Main Purpose: Power Management, H Bridge Driver (Internal FET)
• Embedded: No
• Utilized Ic / Part: MC33887
• Primary Attributes: 5A, 5 ~ 28V, PWM to 20kHz, Active Current Limit
• Secondary Attributes: Fault Status, Sleep Mode, Proportional Current Mirror Output
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Analog Integrated Circuit Device Data
Freescale Semiconductor
Table 4. STATIC ELECTRICAL CHARACTERISTICS
noted reflect the approximate parameter mean at T
POWER SUPPLY
CHARGE PUMP
CONTROL INPUTS
Notes
Operating Voltage Range
Sleep State Supply Current
Standby Supply Current
Threshold Supply Voltage
Charge Pump Voltage
Input Voltage (IN1, IN2, D1,
Input Current (IN1, IN2, D1)
Input Current (D2, EN)
16
17
Characteristics noted under conditions 5.0 V
I
I
Switch-OFF
Switch-ON
Hysteresis
V+ = 5.0 V
8.0 V ≤ V+ ≤ 28 V
Threshold HIGH
Threshold LOW
Hysteresis
V
V
OUT
OUT
IN
D2
Specifications are characterized over the range of 5.0 V ≤ V+ ≤ 28 V. See
the
I
Q (sleep)
- 0.0 V
= 5.0 V
= 0 A, V
= 0 A, V
See Functional Description on page 21
is with sleep mode function enabled.
EN
EN
= 0 V
= 5.0 V
Characteristic
(16)
(17)
D2
)
STATIC ELECTRICAL CHARACTERISTICS
for information about operation outside of this range.
≤
V+
A
≤
= 25°C under nominal conditions unless otherwise noted.
28 V and -40°C
V+
V+
I
Q (STANDBY)
I
(THRES-OFF)
Q (SLEEP)
(THRES-ON)
V
Symbol
V+
CP
V
I
I
V
V+
V
INP
INP
(HYS)
HYS
IH
IL
≤
- V+
T
See Electrical Performance Curves on page 18
A
≤
125°C unless otherwise noted. Typical values
- 200
4.15
3.35
Min
STATIC ELECTRICAL CHARACTERISTICS
150
5.0
4.5
3.5
0.7
–
–
–
–
–
ELECTRICAL CHARACTERISTICS
4.75
Typ
4.4
1.0
- 80
25
25
–
–
–
–
–
–
–
Max
4.65
100
5.0
1.4
28
50
20
20
–
–
–
–
–
and 19 and
Unit
mA
mV
μA
μA
μA
33887
V
V
V
V
V
9