MCP1631RD-MCC1 Microchip Technology, MCP1631RD-MCC1 Datasheet - Page 5

• Manufacturer Part Number: MCP1631RD-MCC1
• Description: REFERENCE DESIGN FOR MCP1631HV
• Manufacturer: Microchip Technology
• Type: Battery Managementr

Specifications of MCP1631RD-MCC1

• Main Purpose: Power Management, Battery Charger
• Embedded: Yes, MCU, 8-Bit
• Utilized Ic / Part: MCP1631HV, PIC16F883
• Primary Attributes: 1 ~ 2 Cell- Li-Ion, 1 ~ 4 Cell- NiCd/NiMH
• Secondary Attributes: Status LEDs
• Supported Devices: MCP1631HV, PIC16F883 Device Type
• Tool / Board Applications: Power Management-Battery Management
• Development Tool Type: Reference Design
• Input Voltage: 5.5 V to 16 V
• Product: Power Management Modules
• Mcu Supported Families: MCP1631HV/PIC16F883 Family
• Silicon Manufacturer: Microchip
• Silicon Core Number: MCP1631HV
• Kit Application Type: Reference Design
• Application Sub Type: Battery Charger
• Kit Contents: Board Only
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With/related Products: MCP1631HV, PIC16F883
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.0
Absolute Maximum Ratings †
V
V
All Other I/O ..............................(GND - 0.3V) to (V
LX to GND............................................. -0.3V to (V
V
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature ...................-40°C to +150°C
Operating Junction Temperature...................-40°C to +125°C
ESD Protection On All Pins:
HBM ................................................................................. 4 kV
MM ..................................................................................400V
DC CHARACTERISTICS
© 2008 Microchip Technology Inc.
Electrical Specifications: Unless otherwise noted, V
V
Input Characteristics
Input Voltage (MCP1631/V)
Input Voltage
(MCP1631HV/VHV)
Undervoltage Lockout
(MCP1631/V)
Undervoltage Lockout Hysteresis
(MCP1631/MCP1631V)
Input Quiescent Current
(MCP1631/V, MCP1631HV,VHV)
Shutdown Current
I_AVDD for MCP1631/V
I_VIN for MCP1631HV/VHV
OSC
Low Level Input Voltage
High Level Input Voltage
Input Leakage Current
External Oscillator Range
Minimum Oscillator High Time
Minimum Oscillator Low Time
Oscillator Rise and Fall Time
Oscillator Input Capacitance
Note 1:
IN
IN
EXT
DD
- GND (MCP1631/V)................................................+6.5V
- GND (MCP1631HV/VHV)....................................+18.0V
Output Short Circuit Current ........................ Continuous
for typical values = 5.0V, T
IN
, OSC
2:
3:
4:
5:
ELECTRICAL
CHARACTERISTICS
Parameters
External Oscillator Input (OSC
characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%
of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and
specified that are not production tested.
The minimum V
TCV
temperature range. V
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V
DIS
and SHDN Input Levels
OUT
= (V
OUT-HIGH
IN
must meet two conditions: V
A
for typical values = +25°C, T
OUT-LOW
- V
T
T
UVLO
T
OH
OL
I
OUT-LOW
R
IN_SHDN
UVLO
I(V
C
I
F
Sym
_MIN.
V
V
_MIN.
LEAK
and T
V
V
OSC
OSC
DD
DD
IH
IL
IN
_HYS
IN
= lowest voltage measured over the temperature range.
)
) rise and fall times between 10 ns and 10 µs were determined during device
F
) *10
DD
DD
6
OUT(MAX)
/ (V
+ 0.3V)
+ 0.3V)
MCP1631/HV/MCP1631V/VHV
IN
0.01
Min
3.0
3.5
2.7
2.0
40
—
—
—
—
—
—
= 3.0V to 5.5V, F
R
* ΔTemperature), V
IN
+ V
A
≥ 3.5V and V
= -40°C to +125°C for all minimum and maximums.
DROPOUT(MAX)
0.005
Typ
2.8
3.7
2.4
4.4
64
10
—
—
—
—
—
—
5
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
OSC
IN
≥ (V
OUT-HIGH
= 1 MHz with 10% Duty Cycle, C
Max
16.0
100
5.5
3.0
0.8
or 3.5V, whichever is greater.
12
17
10
—
—
—
5
1
2
OUT(MAX)
= highest voltage measured over the
Units
MHz
mV
mA
µA
µA
µA
ns
µs
pf
V
V
V
V
V
+ V
DROPOUT(MAX)
Non-HV Options
HV Options (Note 2)
V
below UVLO threshold
UVLO Hysteresis
SHDN = V
SHDN = GND =OSC
Note: Amplifier A3 remains
powered during Shutdown.
Maximum operating frequency is
dependent upon circuit topology
and duty cycle.
Note 1
IN
OUT
Falling, V
.
DD
Conditions
).
EXT
IN
=OSC
= 0.1 µF,
DS22063B-page 5
low when input
DIS
DIS
,