C8051T610DB28 Silicon Laboratories Inc, C8051T610DB28 Datasheet - Page 34

• Manufacturer Part Number: C8051T610DB28
• Description: DAUGHTER BOARD T610 28QFN SOCKET
• Manufacturer: Silicon Laboratories Inc

Specifications of C8051T610DB28

• Module/board Type: Socket Module - QFN
• Processor To Be Evaluated: C8051T61x
• Interface Type: USB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With/related Products: C8051T610DK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 336-1506

C8051T610/1/2/3/4/5/6/7
Table 7.4. Reset Electrical Characteristics
–40 to +85 °C unless otherwise specified.
Table 7.5. Internal Voltage Regulator Electrical Characteristics
–40 to +85 °C unless otherwise specified.
Table 7.6. EPROM Electrical Characteristics
34
Parameter
Input Voltage Range
Bias Current
Parameter
RST Output Low Voltage
RST Input High Voltage
RST Input Low Voltage
RST Input Pullup Current
V
V
Missing Clock Detector 
Timeout
Reset Time Delay
Minimum RST Low Time to
Generate a System Reset
V
V
Parameter
EPROM Size
EPROM Size
Write Cycle Time (per Byte)
Programming Voltage (V
Notes:
DD
DD
DD
DD
1. 512 bytes at location 0x3E00 to 0x3FFF are not available for program storage
2. Refer to device errata for details
POR Ramp Time
Monitor Threshold (V
Monitor Turn-on Time
Monitor Supply Current
PP
RST
)
2
Normal Mode
)
C8051T610/1/6/7
C8051T612/3/4/5
Date Code 0935 and Later
Date Code prior to 0935
I
V
RST = 0.0 V
Time from last system clock
rising edge to reset initiation
Delay between release of any
reset source and code 
execution at location 0x0000
V
OL
DD
DD
= 8.5 mA, 
= 1.8 V to 3.6 V
= V
Conditions
RST
Conditions
Conditions
- 0.1 V
Rev 1.0
16384
8192
0.75 x V
5.75
6.25
Min
105
Min
500
1.7
15
—
—
—
—
—
—
—
1
Min
1.8
—
DD
6.325
Typ
155
6.0
—
—
1.75
Typ
625
25
50
20
—
—
—
—
—
—
Typ
30
—
Max
6.25
205
6.5
—
—
Max
750
0.6
0.6
1.8
50
60
30
—
—
—
Max
1
3.6
50
Units
bytes
bytes
µs
Units
V
V
Units
V
µA
ms
µA
µA
µs
µs
µs
µs
V
V
V
V
DD